Tetsuo Endoh: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

51

Study about the damaged mechanism of the patterned perpendicular magnetic tunnel junctions by hydrogen ion treatments

Jeong, Junho, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.02 MB

english, 2015

52

Ge-Dot Formation on Si(111)-7 ×7 Surface with C Predeposition Using Monomethylsilane

Narita, Yuzuru, Sakai, Masashi, Murata, Takeshi, Endoh, Tetsuo, Suemitsu, Maki

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 191 KB

english, 2005

53

Fabrication Method of Sub-100 nm Metal–Oxide–Semiconductor Field-Effect Transistor with Thick Gate Oxide

Singh, Vipul, Inokawa, Hiroshi, Endoh, Tetsuo, Satoh, Hiroaki

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 788 KB

english, 2010

54

[IEEE OCEANS 2008 - Quebec City, QC, Canada (2008.09.15-2008.09.18)] OCEANS 2008 - Analysis of characteristics of sound propagation in Antarctic Ocean by parabolic equation method

Tsuchiya, Takenobu, Anada, Tetsuo, Endoh, Nobuyuki, Ushio, Shuki

Year:

2008

Language:

english

File:

PDF, 1.39 MB

english, 2008

55

Wave Packet Dynamics in the Spin Torque Transfer

Arikawa, Mitsuhiro, Hatsugai, Yasuhiro, Endoh, Tetsuo, Shiraishi, Kenji

Journal:

Journal of the Physical Society of Japan

Year:

2012

Language:

english

File:

PDF, 210 KB

english, 2012

56

(Invited) Interface Control of Advanced Electronic Devices - High-k/Metal Gate System and Magnetic Tunneling Junction

Niwa, Masaaki, Sato, Soshi, Endoh, Tetsuo

Journal:

ECS Transactions

Year:

2017

Language:

english

File:

PDF, 652 KB

english, 2017

57

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Sasaki, Taro, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.51 MB

english, 2018

58

The Optimum Physical Targets of the 3-Dimensional Vertical FG NAND Flash Memory Cell Arrays with the Extended Sidewall Control Gate (ESCG) Structure

SEO, Moon-Sik, ENDOH, Tetsuo

Journal:

IEICE Transactions on Electronics

Year:

2011

Language:

english

File:

PDF, 1.61 MB

english, 2011

59

[IEEE 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) - Berkeley, CA, USA (2013.10.28-2013.10.29)] 2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) - STT-MRAM and NV-Logic for low power systems

Year:

2013

Language:

english

File:

PDF, 222 KB

english, 2013

60

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Kobayashi, Daisuke, Kakehashi, Yuya, Hirose, Kazuyuki, Onoda, Shinobu, Makino, Takahiro, Ohshima, Takeshi, Ikeda, Shoji, Yamanouchi, Michihiko, Sato, Hideo, Enobio, Eli Christopher, Endoh, Tetsuo, Ohn

Journal:

IEEE Transactions on Nuclear Science

Year:

2014

Language:

english

File:

PDF, 1.48 MB

english, 2014

61

Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing

Hanyu, Takahiro, Endoh, Tetsuo, Suzuki, Daisuke, Koike, Hiroki, Ma, Yitao, Onizawa, Naoya, Natsui, Masanori, Ikeda, Shoji, Ohno, Hideo

Journal:

Proceedings of the IEEE

Year:

2016

Language:

english

File:

PDF, 5.36 MB

english, 2016

62

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - Investigation of the New Physical Model of Ohmic Contact for Future Nanoscale Contacts

Takada, Yukihiro, Muraguchi, Masakazu, Endoh, Tetsuo, Nomura, Shintaro, Shiraishi, Kenji

Year:

2010

Language:

english

File:

PDF, 346 KB

english, 2010

63

Analytical modeling of stress-induced leakage currents in 5.1–9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling

Lenski, Markus, Endoh, Tetsuo, Masuoka, Fujio

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 378 KB

english, 2000

64

Novel Field Effect Diode Type Vertical Capacitorless One Transistor Dynamic Random Access Memory Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

Imamoto, Takuya, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.16 MB

english, 2013

65

[IEEE 2011 11th International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2011.06.9-2011.06.10)] 11th International Workshop on Junction Technology (IWJT) - Impact of a few dopant positions controlled by single-ion implantation on transconductance of FETs

Hori, Masahiro, Ono, Yukinori, Komatsubara, Akira, Kumagai, Kuninori, Tanii, Takashi, Endoh, Tetsuo, Ohdomari, Iwao, Shinada, Takahiro

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

66

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Reliable single atom doping and discrete dopant effects on transistor performance

Shinada, Takahiro, Hori, Masahiro, Ono, Yukinori, Taira, Keigo, Komatsubara, Akira, Tanii, Takashi, Endoh, Tetsuo, Ohdomari, Iwao

Year:

2010

Language:

english

File:

PDF, 1.40 MB

english, 2010

67

Erratum: “Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing” [Appl. Phys. Lett. 106 , 142407 (2015)]

Sato, Soshi, Honjo, Hiroaki, Ikeda, Shoji, Ohno, Hideo, Endoh, Tetsuo, Niwa, Masaaki

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 209 KB

english, 2015

68

Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure

Muraguchi, Masakazu, Sakurai, Yoko, Takada, Yukihiro, Shigeta, Yasuteru, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi, Nomura, Shintaro, Shiraishi, Kenji, Endoh, Tetsuo

Journal:

Key Engineering Materials

Year:

2011

Language:

english

File:

PDF, 266 KB

english, 2011

69

Influence of Silicon Wafer Loading Ambient on Chemical Composition and Thickness Uniformity of Sub-5-nm-Thick Oxide Films

Endoh, Tetsuo, Kimura, Yasutaka, Lenski, Markus, Masuoka, Fujio

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 106 KB

english, 2001

70

The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits

Endoh, Tetsuo, Iga, Fumitaka, Ikeda, Shoji, Miura, Katsuya, Hayakawa, Jun, Kamiyanagi, Masashi, Hasegawa, Haruhiro, Hanyu, Takahiro, Ohno, Hideo

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 636 KB

english, 2010

71

[IEEE 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Rohnert Park, CA, USA (2015.10.5-2015.10.8)] 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing

Hanyu, Takahiro, Natsui, Masanori, Suzuki, Daisuke, Mochizuki, Akira, Onizawa, Naoya, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo

Year:

2015

File:

PDF, 453 KB

2015

72

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

Ishii, Hajime, Ueno, Hiroaki, Ueda, Tetsuzo, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.20 MB

english, 2018

73

Ge dot formation using germane on a monomethylsilane-adsorbed Si(001)–2 × 1 surface

Yuzuru Narita, Takeshi Murata, Atsushi Kato, Tetsuo Endoh, Maki Suemitsu

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 140 KB

english, 2006

74

Excellent scalability including self-heating phenomena of vertical-channel field-effect-diode type capacitor-less one transistor dynamic random access memory cell

Imamoto, Takuya, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.48 MB

english, 2014

75

[IEEE 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2014.6.19-2014.6.20)] 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Output voltage stability of SPMC Type AC-AC converter for power management in IT system

Ohtsuka, Hiroaki, Muraguchi, Masakazu, Ma, Yitao, Endoh, Tetsuo

Year:

2014

Language:

english

File:

PDF, 492 KB

english, 2014

76

Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell

Koike, Hiroki, Ohsawa, Takashi, Miura, Sadahiko, Honjo, Hiroaki, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.80 MB

english, 2014

77

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

Sato, Soshi, Honjo, Hiroaki, Ikeda, Shoji, Ohno, Hideo, Endoh, Tetsuo, Niwa, Masaaki

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 983 KB

english, 2015

78

Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme

Iga, Fumitaka, Yoshida, Yasuhiro, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1007 KB

english, 2012

79

Landau–Lifshitz–Gilbert micromagnetic simulation on spin transfer torque efficiency of sub-30 nm perpendicular magnetic tunnel junctions with etching damage

Ito, Kenchi, Ohuchida, Satoshi, Muraguchi, Masakazu, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

80

High-frequency level-up shifter based on 0.18 µm vertical metal–oxide–semiconductor field-effect transistors with 70% reduction of overshoot voltage above power supply voltage

Tanoi, Satoru, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 2.50 MB

english, 2015

81

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Konno, Atsushi, Narita, Yuzuru, Suemitsu, Maki, Fukidome, Hirokazu, Ito, Takashi, Yasui, Kanji, Nakazawa, Hideki, Endoh, Tetsuo

Journal:

e-Journal of Surface Science and Nanotechnology

Year:

2009

Language:

english

File:

PDF, 296 KB

english, 2009

82

Increase in spin Hall effect and influence of anomalous Nernst effect on spin Hall magnetoresistance in β-phase and α-phase W100−xTax/CoFeB systems

Saito, Yoshiaki, TEZUKA, Nobuki, Ikeda, Shoji, Sato, Hideo, Endoh, Tetsuo

Journal:

Applied Physics Express

Year:

2019

Language:

english

File:

PDF, 755 KB

english, 2019

83

Size dependence of electrostatic lens effect in vertical MOSFETs

Muraguchi, Masakazu, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1015 KB

english, 2014

84

Basic Study of Properties of Planate Acoustic Lens Constructed with Phononic Crystal Structure

Tsuchiya, Takenobu, Anada, Tetsuo, Endoh, Nobuyuki, Matsumoto, Sayuri, Mori, Kazuyoshi

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 716 KB

english, 2012

85

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode

Sato, Soshi, Yamabe, Kikuo, Endoh, Tetsuo, Niwa, Masaaki

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.53 MB

english, 2016

86

[IEEE 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) - Hsinchu, Taiwan (2017.4.24-2017.4.27)] 2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) - Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Year:

2017

Language:

english

File:

PDF, 915 KB

english, 2017

87

[IEEE 2019 Silicon Nanoelectronics Workshop (SNW) - Kyoto, Japan (2019.6.9-2019.6.10)] 2019 Silicon Nanoelectronics Workshop (SNW) - Ultra-Low Power Brain-Inspired Processors and Neuromorphic Processors With CMOS/MTJ Hybrid Technology

Year:

2019

Language:

english

File:

PDF, 83 KB

english, 2019

88

[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - Recent advance in single-ion implantation method for single-dopant devices

Shinada, Takahiro, Hori, Masahiro, Keigo Taira,, Tetsuo Endoh,, Ohdomari, Iwao

Year:

2009

Language:

english

File:

PDF, 1.00 MB

english, 2009

89

[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - The 3-dimensional vertical FG NAND flash memory cell arrays with the novel electrical S/D technique using the Extended Sidewall Control Gate (ESCG)

Seo, Moon-Sik, Park, Sung-kye, Endoh, Tetsuo

Year:

2010

Language:

english

File:

PDF, 364 KB

english, 2010

90

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling

Togashi, Shuta, Ohsawa, Takashi, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 156 KB

english, 2012

91

FAILURE OF DIBUTYRYL AND 8-BROMO-CYCLIC GMP TO MIMIC THE ANTAGONISTIC ACTION OF CARBACHOL ON THE POSITIVE INOTROPIC EFFECTS OF SYMPATHOMIMETIC AMINES IN THE CANINE ISOLATED VENTRICULAR MYOCARDIUM

ENDOH, Masao, SHIMIZU, Tetsuo

Journal:

The Japanese Journal of Pharmacology

Year:

1979

Language:

english

File:

PDF, 740 KB

english, 1979

92

Ion beam etching process for high-density spintronic devices and its damage recovery by the oxygen showering post-treatment process

Jeong, Junho, Endoh, Tetsuo

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.77 MB

english, 2017

93

Oxidation-induced stress in Si nanopillars

Ye, Shujun, Yamabe, Kikuo, Endoh, Tetsuo

Journal:

Journal of Materials Science

Year:

2019

Language:

english

File:

PDF, 2.01 MB

english, 2019

94

Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory

Matsunaga, Shoun, Katsumata, Akira, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 645 KB

english, 2012

95

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures

Sakurai, Yoko, Takada, Yukihiro, Iwata, Juin-Ichi, Shiraishi, Kenji, Nomura, Shintaro, Muraguchi, Masakazu, Endoh, Tetsuo, Shigeta, Yasuteru, Ikeda, Mitsuhisa, Makihara, Katsunori, Miyazaki, Seiichi

Year:

2010

Language:

english

File:

PDF, 297 KB

english, 2010

96

Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

Natsui, Masanori, Tamakoshi, Akira, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 966 KB

english, 2017

97

Endurance characteristics of flash EEPROMs

Tetsuo Endoh, Fujio Masuoka

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1997

File:

PDF, 910 KB

1997

98

Amyloid β protein 42(43) in cerebrospinal fluid of patients with Alzheimer's disease

Akira Tamaoka, Naoya Sawamura, Tetsuo Fukushima, Shin'ichi Shoji, Etsuro Matsubara, Mikio Shoji, Shunsaku Hirai, Yoshiko Furiya, Riuko Endoh, Hiroshi Mori

Journal:

Journal of the Neurological Sciences

Year:

1997

Language:

english

File:

PDF, 334 KB

english, 1997

99

[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - A unique and accurate extraction technique of the asymmetric bottom-pillar resistance for the vertical MOSFET

Sakui, Koji, Endoh, Tetsuo

Year:

2010

Language:

english

File:

PDF, 2.12 MB

english, 2010

100

[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Restructuring of memory hierarchy in computing system with spintronics-based technologies

Endoh, Tetsuo, Ohsawa, Takashi, Koike, Hiroki, Hanyu, Takahiro, Ohno, Hideo

Year:

2012

Language:

english

File:

PDF, 419 KB

english, 2012

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски