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1

Vapour phase epitaxial grown GaAs films with a very low deep level concentration

V.V. Chaldyshev, E.V. Astrova, A.A. Lebedev, I.A. Bobrovnikova, N.A. Chernov, O.M. Ivleva, L.G. Lavrentieva, I.V. Teterkina, M.D. Vilisova

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 308 KB

english, 1995

2

Energy band structure and optical properties of CdSnP2

A. N. Pikhtin, V. N. Razbegaev, N. A. Goryunova, E. I. Leonov, V. M. Orlov, G. F. Karavaev, A. S. Poplavnoi, V. A. Chaldyshev

Journal:

physica status solidi (a)

Year:

1971

Language:

english

File:

PDF, 429 KB

english, 1971

3

Electroreflectance Spectra and Energy Band Structure of CdSnP2

J. Kavaliauskas, G. F. Karavaev, E. I. Leonov, V. M. Orlov, V. A. Chaldyshev, A. Šileika

Journal:

physica status solidi (b)

Year:

1971

Language:

english

File:

PDF, 543 KB

english, 1971

4

Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance

V. V. Chaldyshev, A. S. Shkolnik, V. P. Evtikhiev, T. Holden

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 219 KB

english, 2008

5

Elastic behavior of a spherical inclusion with a given uniaxial dilatation

N. A. Bert, A. L. Kolesnikova, A. E. Romanov, V. V. Chaldyshev

Journal:

Physics of the Solid State

Year:

2002

Language:

english

File:

PDF, 263 KB

english, 2002

6

Electron microscopy of GaAs Structures with InAs and as quantum dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

7

Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers

L. G. Lavrent'eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Russian Physics Journal

Year:

2002

Language:

english

File:

PDF, 388 KB

english, 2002

8

Surface states in gallium arsenide

V. A. Goryunov, V. A. Chaldyshev, V. N. Chernyshov

Journal:

Russian Physics Journal

Year:

1979

Language:

english

File:

PDF, 203 KB

english, 1979

9

Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

Chen, Y., Maharjan, N., Liu, Z., Nakarmi, M. L., Chaldyshev, V. V., Kundelev, E. V., Poddubny, A. N., Vasil'ev, A. P., Yagovkina, M. A., Shakya, N. M.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.68 MB

english, 2017

10

Formation of n+-Layers in Undoped and Indium-Doped GaAs Wafers by Si and Si+P Ion Implantation

V. V. Chaldyshev, N. N. Dymova, A. E. Kunitsyn, A. V. Markov

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 202 KB

english, 1997

11

Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

M.V. Baidakova, N.A. Bert, V.V. Chaldyshev, V.N. Nevedomsky, M.A. Yagovkina, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 302 KB

english, 2009

12

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

V.V Chaldyshev, N.N Faleev, N.A Bert, Yu.G Musikhin, A.E Kunitsyn, V.V Preobrazhenskii, M.A Putyato, B.R Semyagin, P Werner

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 187 KB

english, 1999

13

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Materials Science and Engineering: A

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

14

Two-dimensional organization of As clusters in GaAs

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 645 KB

english, 2002

15

Energy Band Structure of Ternary Diamond-Like A2B4C-Type Semiconductors

N. A. Goryunova, A. S. Poplavnoi, Yu. I. Polygalov, V. A. Chaldyshev

Journal:

physica status solidi (b)

Year:

1970

Language:

english

File:

PDF, 599 KB

english, 1970

16

Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process

V. V. Chaldyshev, N. A. Bert, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 359 KB

english, 2009

17

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

I. A. Bobrovnikova, A. I. Veinger, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, D. I. Lubyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, V. V. Chaldyshev, M. P. Yakubeny

Journal:

Russian Physics Journal

Year:

1998

Language:

english

File:

PDF, 1.04 MB

english, 1998

18

Electron spectrum of arsenic inclusions in gallium arsenide

A. A. Sofronov, S. G. Kataev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1998

Language:

english

File:

PDF, 250 KB

english, 1998

19

Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

L. G. Lavrent’eva, M. D. Vilisova, I. A. Bobrovnikova, S. E. Toropov, V. V. Preobrazhenskii, B. R. Semyagin, M. A. Putyato, V. V. Chaldyshev

Journal:

Journal of Structural Chemistry

Year:

2004

Language:

english

File:

PDF, 449 KB

english, 2004

20

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

L. G. Lavrentieva, M. D. Vilisova, I. A. Bobrovnikova, I. V. Ivonin, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Russian Physics Journal

Year:

2006

Language:

english

File:

PDF, 311 KB

english, 2006

21

Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001)

V. V. Chaldyshev, Fred H. Pollak, M. Pophristic, S. P. Gou, I. Ferguson

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 133 KB

english, 2002

22

Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

N. N. Dymova, A. E. Kunitsyn, V. V. Chaldyshev, A. V. Markov

Journal:

Year:

1997

Language:

english

File:

PDF, 86 KB

english, 1997

23

Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt

A. E. Kunitsyn, V. V. Chaldyshev, A. G. Mil’vidskaya, M. G. Mil’vidskii

Journal:

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

24

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 125 KB

english, 1998

25

Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

M. G. Mil’vidskii, V. V. Chaldyshev

Journal:

Year:

1998

Language:

english

File:

PDF, 352 KB

english, 1998

26

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, N. N. Faleev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 79 KB

english, 1998

27

Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters

S. N. Grinyaev, V. A. Chaldyshev

Journal:

Year:

1998

Language:

english

File:

PDF, 155 KB

english, 1998

28

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, R. Werner

Journal:

Year:

1998

Language:

english

File:

PDF, 452 KB

english, 1998

29

Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters

P. N. Brunkov, V. V. Chaldyshev, N. A. Bert, A. A. Suvorova, S. G. Konnikov, A. V. Chernigovskii, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 293 KB

english, 1998

30

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, A. E. Kunitsyn, Yu. G. Musikhin, V. V. Tret’yakov, P. Werner

Journal:

Year:

1998

Language:

english

File:

PDF, 738 KB

english, 1998

31

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, S. V. Subach, M. P. Yakubenya, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev

Journal:

Year:

1999

Language:

english

File:

PDF, 540 KB

english, 1999

32

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

A. E. Kunitsyn, V. V. Chaldyshev, S. P. Vul’, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1999

Language:

english

File:

PDF, 56 KB

english, 1999

33

Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters

P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2000

Language:

english

File:

PDF, 172 KB

english, 2000

34

Deep levels related to gallium atom clusters in GaAs

S. N. Grinyaev, V. A. Chaldyshev

Journal:

Year:

2001

Language:

english

File:

PDF, 73 KB

english, 2001

35

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

Journal:

Year:

2002

Language:

english

File:

PDF, 67 KB

english, 2002

36

Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers

L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Crystallography Reports

Year:

2002

Language:

english

File:

PDF, 257 KB

english, 2002

37

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2004

Language:

english

File:

PDF, 102 KB

english, 2004

38

A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide

P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2005

Language:

english

File:

PDF, 71 KB

english, 2005

39

Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters

P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2005

Language:

english

File:

PDF, 59 KB

english, 2005

40

Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature

A. V. Boĭtsov, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev, M. A. Yagovkina, V. V. Preobrazhenskiĭ, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2006

Language:

english

File:

PDF, 217 KB

english, 2006

41

Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells

V. V. Chaldyshev, A. S. Shkol’nik, V. P. Evtikhiev, T. Holden

Journal:

Year:

2006

Language:

english

File:

PDF, 182 KB

english, 2006

42

Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers

V. V. Chaldyshev, A. S. Shkol’nik, V. P. Evtikhiev, T. Holden

Journal:

Year:

2007

Language:

english

File:

PDF, 193 KB

english, 2007

43

As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus

A. V. Boitsov, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 208 KB

english, 2009

44

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

45

GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 256 KB

english, 2009

46

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

47

An (AlGaAs/GaAs/AlGaAs)60resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells

V. V. Chaldyshev, D. E. Sholohov, A. P. Vasil’ev

Journal:

Year:

2010

Language:

english

File:

PDF, 185 KB

english, 2010

48

Special frequencies in the optical reflectance spectra of resonant Bragg structures

M. M. Voronov, E. L. Ivchenko, A. N. Poddubnyĭ, V. V. Chaldyshev

Journal:

Physics of the Solid State

Year:

2006

Language:

english

File:

PDF, 247 KB

english, 2006

49

Elastic-energy relaxation in heterostructures with strained nanoinclusions

A. L. Kolesnikova, A. E. Romanov, V. V. Chaldyshev

Journal:

Physics of the Solid State

Year:

2007

Language:

english

File:

PDF, 259 KB

english, 2007

50

Elastic fields and physical properties of surface quantum dots

N. A. Bert, A. L. Kolesnikova, I. K. Korolev, A. E. Romanov, A. B. Freidin, V. V. Chaldyshev, E. C. Aifantis

Journal:

Physics of the Solid State

Year:

2011

Language:

english

File:

PDF, 651 KB

english, 2011

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