Volume 45; Issue 5-6

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Microelectronics Reliability
Volume 45; Issue 5-6

Microelectronics Reliability

Volume 45; Issue 5-6

1

Behrouz A. Forouzan, ,Data Communications and Networking Third edition (2003) McGraw-Hill Higher Education,Boston 0-07-251584-8 Softcover, pp. 973, plus XXXIV.

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 220 KB

english, 2005

2

Carl Hamacher, Zvonko Vranesic, Safwat Zaky, Computer Organization, Fifth edition, 2004, ISBN 0-07-112214-4. Hardcover, pp. 805, plus XX

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 213 KB

english, 2005

3

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides

C. Trapes, D. Goguenheim, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 134 KB

english, 2005

4

In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability

M. Langenbuch, R. Bottini, M.E. Vitali, G. Ghidini

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 318 KB

english, 2005

5

Optimization of low temperature silicon nitride processes for improvement of device performance

E. Sleeckx, M. Schaekers, X. Shi, E. Kunnen, B. Degroote, M. Jurczak, M. de Potter de ten Broeck, E. Augendre

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 278 KB

english, 2005

6

Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics

R. Fernández, R. Rodrı́guez, M. Nafrı́a, X. Aymerich

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

7

Testing Static Random Access Memories: Defects, Fault Models and Test Patterns, Said Hamdioui, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp. 221, plus XX, euro 109, ISBN 1-4020-7752-1

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 59 KB

english, 2005

8

The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors

P.C. Juan, H.C. Chou, J.Y.M. Lee

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 161 KB

english, 2005

9

LPCVD-silicon oxynitride films: interface properties

E. Halova, S. Alexandrova, A. Szekeres, M. Modreanu

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 127 KB

english, 2005

10

On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD

S. Dueñas, H.Castán, H. García, J. Barbolla, E. San Andrés, I. Mártil, G. González-Díaz

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 299 KB

english, 2005

11

Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD

J.M. Decams, H. Guillon, C. Jiménez, M. Audier, J.P. Sénateur, C. Dubourdieu, O. Cadix, B.J. O’Sullivan, M. Modreanu, P.K. Hurley, S. Rusworth, T.J. Leedham, H. Davies, Q. Fang, I. Boyd

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 130 KB

english, 2005

12

Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors

E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 175 KB

english, 2005

13

Charge storage peculiarities in poly-Si–SiO2–Si memory devices with Si nanocrystals rich SiO2

V.I. Turchanikov, A.N. Nazarov, V.S. Lysenko, Josep Carreras, B. Garrido

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

14

Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric

E. Spitale, D. Corso, I. Crupi, S. Lombardo, C. Gerardi

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 164 KB

english, 2005

15

Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy

J. Yang, J.J. Kopanski, A. Postula, M. Bialkowski

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 120 KB

english, 2005

16

Impact of interface and bulk trapped charges on transistor reliability

G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, A. Ghetti, N. Galbiati, G. Giusto, A. Garavaglia

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 196 KB

english, 2005

17

Structure of the oxide damage under progressive breakdown

F. Palumbo, G. Condorelli, S. Lombardo, K.L. Pey, C.H. Tung, L.J. Tang

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

18

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown

G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 185 KB

english, 2005

19

Dielectric properties of two phases of crystalline lutetium oxide

Pietro Delugas, Vincenzo Fiorentini

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 99 KB

english, 2005

20

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

G. Lucovsky, J.G. Hong, C.C. Fulton, N.A. Stoute, Y. Zou, R.J. Nemanich, D.E. Aspnes, H. Ade, D.G. Schlom

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 367 KB

english, 2005

21

Admittance spectroscopy of traps at the interfaces of (1 0 0)Si with Al2O3, ZrO2, and HfO2

L. Truong, Y.G. Fedorenko, V.V. Afanaśev, A. Stesmans

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 120 KB

english, 2005

22

Probing stress effects in HfO2 gate stacks with time dependent measurements

Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 366 KB

english, 2005

23

Observation and characterization of defects in HfO2 high-K gate dielectric layers

Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt, Marc Heyns

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 538 KB

english, 2005

24

Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance

G.S. Lujan, W. Magnus, L-Å Ragnarsson, S. Kubicek, S. De Gendt, M. Heyns, K. De Meyer

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 130 KB

english, 2005

25

Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics

Udo Schwalke, Yordan Stefanov

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 271 KB

english, 2005

26

Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey

W. Deweerd, V. Kaushik, J. Chen, Y. Shimamoto, T. Schram, L.-Å. Ragnarsson, A. Delabie, L. Pantisano, B. Eyckens, J.W. Maes, S. De Gendt, M. Heyns

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 486 KB

english, 2005

27

Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

T. Schram, L.-Å Ragnarsson, G. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R.J.P. Lander, J.C. Hooker, J. Vertommen, K. De Meyer, S. De Gendt, M. Heyns

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 264 KB

english, 2005

28

Bond strain and defects at interfaces in high-k gate stacks

G. Lucovsky, J.C. Phillips

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 323 KB

english, 2005

29

Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

S. Dueñas, H. Castán, H. García, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 388 KB

english, 2005

30

Challenges for dielectric materials in future integrated circuit technologies

C.M. Garner, G. Kloster, G. Atwood, L. Mosley, A.C. Palanduz

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 170 KB

english, 2005

31

Boris Murmann, Bernhard Boser, Digitally Assisted Pipeline ADCs: Theory and Implementation, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7839-0. Hardcover, pp. 155, plus XX, euro 105

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 210 KB

english, 2005

32

Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing

A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato, N.D. Young

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 202 KB

english, 2005

33

Editorial

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 78 KB

english, 2005

34

Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range

James Prendergast, Eoin O’Driscoll, Ed Mullen

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 124 KB

english, 2005

35

Optical and electrical characterization of hafnium oxide deposited by MOCVD

Y. Lu, O. Buiu, S. Hall, P. K. Hurley

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 228 KB

english, 2005

36

Electrical properties of metal–HfO2–silicon system measured from metal–insulator–semiconductor capacitors and metal–insulator–semiconductor field–effect transistors using HfO2 gate dielectric

Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 245 KB

english, 2005

37

Post deposition UV-induced O2 annealing of HfO2 thin films

Q. Fang, I. Liaw, M. Modreanu, P.K. Hurley, I.W. Boyd

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 115 KB

english, 2005

38

Comparison of metal gate electrodes on MOCVD HfO2

M.C. Lemme, J.K. Efavi, H.D.B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 320 KB

english, 2005

39

Light emission from Si/SiO2 superlattices fabricated by RPECVD

R. Rölver, O. Winkler, M. Först, B. Spangenberg, H. Kurz

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 205 KB

english, 2005

40

A comprehensive model for oxide degradation

Fernanda Irrera, Giuseppina Puzzilli, Domenico Caputo

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 121 KB

english, 2005

41

Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3 nm thick oxides

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 180 KB

english, 2005

42

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

Robert O’Connor, Greg Hughes, Robin Degraeve, Ben Kaczer

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

43

Implementation of high-k and metal gate materials for the 45 nm node and beyond: gate patterning development

S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt, S. Biesemans, S. Vanhaelemeersch, J. Vertommen, B. Coenegrachts

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 275 KB

english, 2005

44

Vapour pressure measurement of low volatility precursors

S.A. Rushworth, L.M. Smith, A.J. Kingsley, R. Odedra, R. Nickson, P. Hughes

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 131 KB

english, 2005

45

Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS

Giacomo Barletta, Giuseppe Currò

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 324 KB

english, 2005

46

Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200 °C

M. Vasilopoulou, A.M. Douvas, D. Kouvatsos, P. Argitis, D. Davazoglou

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 194 KB

english, 2005

47

Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4 + O2

V.Em. Vamvakas, D. Davazoglou

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 165 KB

english, 2005

48

Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films

Ming-Tsong Wang, Tsung-Hong Wang, Joseph Ya-min Lee

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 283 KB

english, 2005

49

AVD® technology for deposition of next generation devices

U. Weber, M. Schumacher, J. Lindner, O. Boissière, P. Lehnen, S. Miedl, P.K. Baumann, G. Barbar, C. Lohe, T. McEntee

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 353 KB

english, 2005

50

Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100)

A. Sibai, S. Lhostis, Y. Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J.P. Sénateur, M. Audier, L. Hubert-Pfalzgraff, C. Dubourdieu, F. Ducroquet

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 263 KB

english, 2005

51

Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology

V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 193 KB

english, 2005

52

Electrical properties of MIS capacitor using low temperature electron beam gun—evaporated HfAlO dielectrics

V. Mikhelashvili, B. Meyler, J. Shneider, O. Kreinin, G. Eisenstein

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 225 KB

english, 2005

53

Crested barrier in the tunnel stack of non-volatile memories

Fernanda Irrera, Giuseppina Puzzilli

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 296 KB

english, 2005

54

Improved charge injection in Si nanocrystal non-volatile memories

Josep Carreras, B. Garrido, J.R. Morante

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 431 KB

english, 2005

55

On the SILC mechanism in MOSFET’s with ultrathin oxides

D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 188 KB

english, 2005

56

Reliability of gate dielectrics and metal–insulator–metal capacitors

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 342 KB

english, 2005

57

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 143 KB

english, 2005

58

On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers

J. Pétry, W. Vandervorst, L. Pantisano, R. Degraeve

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 190 KB

english, 2005

59

Breakdown spots of ultra-thin (EOT 

X. Blasco, M. Nafrı́a, X. Aymerich, J. Pétry, W. Vandervorst

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 235 KB

english, 2005

60

Impact of nitrogen incorporation on interface states in (1 0 0)Si/HfO2

Y.G. Fedorenko, L. Truong, V.V. Afanas’ev, A. Stesmans, Z. Zhang, S.A. Campbell

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 193 KB

english, 2005

61

Reverse short channel effects in high-k gated nMOSFETs

J.-P. Han, S.M. Koo, E.M. Vogel, E.P. Gusev, C. D’Emic, C.A. Richter, J.S. Suehle

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

62

Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales

N. Baboux, C. Plossu, P. Boivin

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 290 KB

english, 2005

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