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51

[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

Sonoda, Ken'ichiro, Ishikawa, Kiyoshi, Eimori, Takahisa, Tsuchiya, Osamu

Year:

2006

Language:

english

File:

PDF, 3.83 MB

english, 2006

52

[IEEE 1994 VLSI Technology Symposium - Honolulu, HI, USA (7-9 June 1994)] Proceedings of 1994 VLSI Technology Symposium - A memory cell capacitor with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BST) film for advanced DRAMs

Ohno, Y., Horikawa, T., Shinkawata, H., Kashihara, K., Kuroiwa, T., Okudaira, T., Hashizume, Y., Fukumoto, K., Eimori, T., Shibano, T., Arimoto, K., Itoh, H., Nishimura, T., Miyoshi, H.

Year:

1994

Language:

english

File:

PDF, 187 KB

english, 1994

53

[IEEE Extended Abstracts of the Third International Workshop on Junction Technology. IWJT - Tokyo, Japan (2002.12.3-2002.12.3)] Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. - Elevated source/drain engineering with smooth surface morphology for ultrathin-SOI CMOS

Sugihara, K., Nakahata, T., Matsumoto, T., Maeda, S., Maegawa, S., Ota, K., Sayama, H., Oda, H., Eimori, T., Abe, Y., Ozeki, T., Inoue, Y.

Year:

2002

Language:

english

File:

PDF, 372 KB

english, 2002

54

Oxygen diffusion into diamond induced by hydrogen microwave plasma

Mori, Y., Eimori, N., Kozuka, H., Yokota, Y., Moon, J., Ma, J. S., Ito, T., Hiraki, A.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 499 KB

english, 1992

55

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - 16 Mb DRAM/SOI technologies for sub-1 V operation

Oashi, T., Eimori, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T., Miyoshi, H.

Year:

1996

Language:

english

File:

PDF, 451 KB

english, 1996

56

[IEEE 2005 International Conference On Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2005.09.3-2005.09.3)] 2005 International Conference On Simulation of Semiconductor Processes and Devices - Simulation of Drain Current Reduction Caused by Process-Induced Stress

Uchida, T., Takashino, H., Tanizawa, M., Okagaki, T., Ishikawa, K., Eimori, T., Ohji, Y.

Year:

2005

Language:

english

File:

PDF, 1.69 MB

english, 2005

57

[IEEE IEEE International Solid-State Circuits Conference - ISSCC '94 - San Francisco, CA, USA (16-18 Feb. 1994)] Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94 - A 34 ns 256 Mb DRAM with boosted sense-ground scheme

Asakura, M., Ohishi, T., Tsukude, M., Tomishima, S., Hidaka, H., Arimoto, K., Fujishima, K., Eimori, T., Ohno, Y., Nishimura, T., Yasunaga, M., Kondoh, T., Satoh, S.-I., Yoshihara, T., Demizu, K.

Year:

1994

Language:

english

File:

PDF, 312 KB

english, 1994

58

[IEEE 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers - San Francisco, CA, USA (6-8 Feb. 1997)] 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers - A 1 V 46 ns 16 Mb SOI-DRAM with body control technique

Shimomura, K., Shimano, H., Okuda, F., Sakashita, N., Oashi, T., Yamaguchi, Y., Eimori, T., Inuishi, M., Arimoto, K., Maegawa, S., Inoue, Y., Nishimura, T., Komori, S., Kyuma, K., Yasuoka, A., Abe, H.

Year:

1997

Language:

english

File:

PDF, 1.32 MB

english, 1997

59

Aluminum tolerance in sorghum and bean ‐ methods and results

Malavolta, E., Nogueira, F. D., Oliveira, I. P., Nakayama, L., Eimori, I.

Journal:

Journal of Plant Nutrition

Year:

1981

Language:

english

File:

PDF, 319 KB

english, 1981

60

Analog design optimization methodology for ultralow-power circuits using intuitive inversion-level and saturation-level parameters

Eimori, Takahisa, Anami, Kenji, Yoshimatsu, Norifumi, Hasebe, Tetsuya, Murakami, Kazuaki

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.30 MB

english, 2014

61

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages

Nara, Yasuo, Mise, Nobuyuki, Kadoshima, Masaru, Morooka, Tetsu, Kamiyama, Satoshi, Matsuki, Takeo, Sato, Motoyuki, Ono, Tetsuo, Aoyama, Takayuki, Eimori, Takahisa, Ohji, Yuzuru

Year:

2008

Language:

english

File:

PDF, 764 KB

english, 2008

62

[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Single Metal/Dual High-k CMISFETs without High-k-induced Vth Variation by MgO or Al2O3 Incorporation

Mise, Nobuyuki, Morooka, Tetsu, Eimori, Takahisa, Ono, Tetsuo, Nara, Yasuo, Ohji, Yuzuru

Year:

2008

Language:

english

File:

PDF, 431 KB

english, 2008

63

Treatment of pathological fracture of the femur due to diffuse haemangioma in the lower limb: A REPORT OF TWO CASES

Journal:

Journal of Bone and Joint Surgery - British Volume

Year:

2005

Language:

english

File:

PDF, 111 KB

english, 2005

64

Electron Affinity of Single-Crystalline Chemical-Vapor-Deposited Diamond Studied by Ultraviolet Synchrotron Radiation

Eimori, Nobuhiro, Mori, Yusuke, Hatta, Akimitsu, Ito, Toshimichi, Hiraki, Akio

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 600 KB

1994

65

Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors

Matsuki, Takeo, Mise, Nobuyuki, Inumiya, Seiji, Eimori, Takahisa, Nara, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 279 KB

english, 2007

66

Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak

Nishida, Yukio, Ueno, Shuichi, Uchida, Tetsuya, Eikyu, Katsumi, Kinugasa, Akinori, Terauchi, Takashi, Tsunomura, Takaaki, Takeuchi, Masahiko, Shirahata, Masayoshi, Eimori, Takahisa, Inoue, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 290 KB

english, 2003

67

Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al 2 O 3 -Capped HfO 2 Dielectrics by Controlling Al 2 O 3 Diffusion Annealing Process

Morooka, Tetsu, Matsuki, Takeo, Mise, Nobuyuki, Kamiyama, Satoshi, Nabatame, Toshihide, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 1.01 MB

english, 2009

68

Saturation Phenomenon of Stress-Induced Gate Leakage Current

S. Ueno, T. Kuroi, A. Teramoto, H. Umeda, T. Eimori, Y. Inoue

Year:

2002

Language:

english

File:

PDF, 143 KB

english, 2002

69

Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3Incorporation and Stack Variation

N. Mise, M. Kadoshima, T. Morooka, T. Eimori, Y. Nara, Y. Ohji

Year:

2008

Language:

english

File:

PDF, 225 KB

english, 2008

70

Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High- k P-Channel Field Effect Transistors Using Ion-Beam W

Ootsuka, Fumio, Katakami, Akira, Shirai, Kiyoshi, Nakata, Hiroyuki, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru, Shimura, Kazuhiro, Horii, Sadayoshi, Sano, Nobuyuki, Yamabe, Kikuo

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 366 KB

english, 2009

71

Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition

Mori, Yusuke, Show, Yoshiyuki, Deguchi, Masahiro, Yagi, Hiromasa, Yagyu, Hiroyuki, Eimori, Nobuhiro, Okada, Takashi, Hatta, Akimitsu, Nishimura, Kazuhito, Kitabatake, Makoto, Ito, Toshimichi, Hirao, T

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 224 KB

english, 1993

72

W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Yamashita, Tomohiro, Nishida, Yukio, Hayashi, Kiyoshi, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 218 KB

english, 2004

73

Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors

Matsuki, Takeo, Inumiya, Seiji, Mise, Nobuyuki, Eimori, Takahisa, Nara, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 163 KB

english, 2007

74

Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO 2 /Si Analyzed by Positron Annihilation

Matsuki, Takeo, Watanabe, Toshinari, Miura, Takayoshi, Mise, Nobuyuki, Eimori, Takahisa, Nara, Yasuo, Ohji, Yuzuru, Uedono, Akira, Yamada, Keisaku

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 297 KB

english, 2007

75

Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices

K. Sugihara, T. Nakahata, T. Matsumoto, S. Maeda, S. Maegawa, K. Ota, H. Sayama, H. Oda, T. Eimori, Y. Abe, T. Ozeki, Y. Inoue, T. Nishimura

Year:

2003

Language:

english

File:

PDF, 806 KB

english, 2003

76

Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond

Hayashi, Takashi, Yamashita, Tomohiro, Shiga, Katsuya, Hayashi, Kiyoshi, Oda, Hidekazu, Eimori, Takahisa, Inuishi, Masahide, Ohji, Yuzuru

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 121 KB

english, 2005

77

Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films

Mori, Yusuke, Deguchi, Masahiro, Okada, Takashi, Eimori, Nobuhiro, Yagi, Hiromasa, Hatta, Akimitsu, Nishimura, Kazuhito, Kitabatake, Makoto, Ito, Toshimichi, Hirao, Takashi, Sasaki, Takatomo, Hiraki,

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 295 KB

english, 1993

78

Effect of Hydrogen Plasma Treatment on Implantation Damage in Diamond Films Grown by Chemical Vapour Deposition

Mori, Yusuke, Deguchi, Masahiro, Eimori, Nobuhiro, Ma, Jing Shing, Nishimura, Kazuhito, Kitabatake, Makoto, Ito, Toshimichi, Hirao, Takashi, Hiraki, Akio

Journal:

Japanese Journal of Applied Physics

Year:

1992

File:

PDF, 561 KB

1992

79

Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide

Mori, Yusuke, Yagi, Hiromasa, Deguchi, Masahiro, Sogi, Tadayuki, Yokota, Yoshihiro, Eimori, Nobuhiro, Yagyu, Hiroyuki, Ohnishi, Hisao, Kitabatake, Makoto, Nishimura, Kazuhito, Hatta, Akimitsu, Ito, To

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 1.12 MB

english, 1993

80

Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate

S. Satoh, T. Eimori, H. Matsumoto

Year:

1985

File:

PDF, 396 KB

1985

81

X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist

Y. Suzuki, N. Ishio, T. Eimori, N. Yoshioka, Y. Watakabe, T. Yamazaki

Year:

1987

File:

PDF, 2.89 MB

1987

82

Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory

T. Morihara, Y. Ohno, T. Eimori, T. Katayama, S. Satoh, T. Nishimura, H. Miyoshi

Year:

1994

File:

PDF, 1.29 MB

1994

83

Effect of Ambient on the Surface Resistance of Diamond Films during Cooling after Deposition

Y. Mori, N. Eimori, A. Hatta, T. Ito, A. Hiraki

Year:

1992

File:

PDF, 483 KB

1992

84

Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNxMetal Gate in Metal/HfSiON n-Type Field-Effect Transistors

T. Onizawa, M. Sato, T. Aoyama, T. Eimori, Y. Nara, Y. Ohji

Year:

2008

Language:

english

File:

PDF, 320 KB

english, 2008

85

Development of novel antisense oligonucleotides for the functional regulation of RNA-induced silencing complex (RISC) by promoting the release of microRNA from RISC

Ariyoshi, Jumpei, Momokawa, Daiki, Eimori, Nao, Kobori, Akio, Murakami, Akira, Yamayoshi, Asako

Journal:

Bioconjugate Chemistry

Year:

2015

Language:

english

File:

PDF, 1.52 MB

english, 2015

86

[IEEE 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2015.6.4-2015.6.5)] 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Low drift MEMS humidity sensor by intermittent heating

Ooe, Hideaki, Eimori, Takeshi, Nomura, Masanobu, Nishikawa, Hiroshi, Fujimoto, Katsumi, Hasegawa, Takashi

Year:

2015

Language:

english

File:

PDF, 239 KB

english, 2015

87

SPIE Proceedings [SPIE 1989 Microlithography Conferences - San Jose, CA (Monday 27 February 1989)] Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII - Fabrication of 1-Mbit DRAMs By Using X-Ray Lithography

Yoshioka, Nobuyuki, Ishio, Noriaki, Fujiwara, Nobuo, Eimori, Takahisa, Watakabe, Yaichiro, Kodama, Kenichi, Miyachi, Takashi, Izawa, Hisao, Yanof, Arnold W.

Year:

1989

Language:

english

File:

PDF, 8.73 MB

english, 1989

88

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Inverse-Vg Dependence of PBTI Lifetime of HfSiON Gate Dielectrics Measured by a High-Temperature Pulsed-IV Method

Ootsuka, Fumio, Eimori, Takahia, Nara, Yasuo, Ohji, Yuzuru

Year:

2007

Language:

english

File:

PDF, 192 KB

english, 2007

89

Characterization of the releasing profile of microRNA from RISC using anti-miRNA oligonucleotides

Ariyoshi, Jumpei, Eimori, Nao, Kobori, Akio, Murakami, Akira, Sugiyama, Hiroshi, Yamayoshi, Asako

Journal:

Chemistry Letters

Year:

2016

Language:

english

File:

PDF, 2.40 MB

english, 2016

90

Lighting installation of Toyama prefectural athletic field

Suzuki, Hisayosi, Kinosita, Seiiti, Eimori, Syuichi, Ohyama, Takashi, Sanada, Mineo

Year:

1995

File:

PDF, 1.97 MB

1995

91

Disrupted Bone Metabolism in Long-Term Bedridden Patients

Eimori, Keiko, Endo, Naoto, Uchiyama, Seiji, Takahashi, Yoshinori, Kawashima, Hiroyuki, Watanabe, Kei, Hind, Karen

Journal:

Year:

2016

Language:

english

File:

PDF, 1.08 MB

english, 2016

92

Improvement in Photochromic Property of Nickel Oxide-Based Photochromic Composite Films by Cobalt Addition

Miyazaki, Hidetoshi, Eimori, Narumi, Matsuura, Takahiro, Ota, Toshitaka

Journal:

Journal of Materials Science Research

Year:

2017

Language:

english

File:

PDF, 966 KB

english, 2017

93

Estudos sobre o efeito de doses crescentes de cloreto na soja (Glycine max (L.) Merr.) em solução nutritiva: I. crescimento e produção

Malavolta, E., Freire, F. Morel, Casagrande, J.C., Nakayama, L.I., Eimori, I., Castillo, J.A.B.

Journal:

Anais da Escola Superior de Agricultura Luiz de Queiroz

Year:

1980

File:

PDF, 1.44 MB

1980

94

Efeitos das deficiências de macronutrientes em duas variedades de soja (Glycine max (L.) Merr.), Santa rosa e UFV-1, cultivadas em solução nutritiva

Malavolta, E., Vidal, A.A., Gheller, A.C ., Fancelli, A.L., Kishimo, A.Y., Piza Jr., C. Toledo, Santos, D.B., Ruy, V.M., Faquimo, V., Eimori, I.E., Guimares, P.T.G., Ortiz, O.B., Vargas, P.G., Fornasi

Journal:

Anais da Escola Superior de Agricultura Luiz de Queiroz

Year:

1980

File:

PDF, 1.47 MB

1980