4

Sublimation growth of 3C–SiC on 6H–SiC seeds

Year:
2005
Language:
english
File:
PDF, 376 KB
english, 2005
5

Evolution of domain walls in 6H- and 4H-SiC single crystals

Year:
2002
Language:
english
File:
PDF, 209 KB
english, 2002
13

Zur thermisch aktivierten Basisgleitung von Antimoneinkristallen

Year:
1976
Language:
german
File:
PDF, 263 KB
german, 1976
19

The problem of twinning in NdGaO3 Czochralski crystals

Year:
1994
Language:
english
File:
PDF, 386 KB
english, 1994
23

Surface preparation of 4H–SiC substrates for hot-wall CVD of SiC layers

Year:
2001
Language:
english
File:
PDF, 427 KB
english, 2001
26

Some observations concerning the initial stage of plastic flow in silicon

Year:
1978
Language:
english
File:
PDF, 150 KB
english, 1978
29

Differences in plastic deformation behaviour of CZ- and FZ-grown silicon crystals

Year:
1981
Language:
english
File:
PDF, 139 KB
english, 1981
36

Phase Separation in Oxide−Borate Mixed Systems

Year:
2003
Language:
english
File:
PDF, 111 KB
english, 2003
37

Morphological Features of Sublimation-Grown 4H-SiC Layers

Year:
2003
Language:
english
File:
PDF, 712 KB
english, 2003