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51

NBTI Reliability of SiGe and Ge Channel pMOSFETs With $ \hbox{SiO}_{2}/\hbox{HfO}_{2}$ Dielectric Stack

Franco, Jacopo, Kaczer, Ben, Mitard, Jerome, Toledano-Luque, Maria, Roussel, Philippe J., Witters, Liesbeth, Grasser, Tibor, Groeseneken, Guido

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2013

Language:

english

File:

PDF, 1.74 MB

english, 2013

52

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Experimental characterization of BTI defects

Kaczer, B., Afanas'ev, V. V., Rott, K., Cerbu, F., Franco, J., Goes, W., Grasser, T., Madia, O., Nguyen, A. P. D., Stesmans, A., Reisinger, H., Toledano-Luque, M., Weckx, P.

Year:

2013

Language:

english

File:

PDF, 1.67 MB

english, 2013

53

Circuit simulation of workload-dependent RTN and BTI based on trap kinetics

Camargo, V.V.A., Kaczer, B., Grasser, T., Wirth, G.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 760 KB

english, 2014

54

[IEEE 2010 IEEE International Symposium on Circuits and Systems - ISCAS 2010 - Paris, France (2010.05.30-2010.06.2)] Proceedings of 2010 IEEE International Symposium on Circuits and Systems - Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits

Magnone, Paolo, Crupi, Felice, Alioto, Massimo, Kaczer, Ben

Year:

2010

Language:

english

File:

PDF, 267 KB

english, 2010

55

Interface/Bulk Trap Recovery After Submelt Laser Anneal and the Impact to NBTI Reliability

Moonju Cho,, Aoulaiche, Marc, Degraeve, Robin, Ortolland, Claude, Kauerauf, Thomas, Kaczer, Ben, Roussel, Philippe, Hoffmann, Thomas Y, Groeseneken, Guido

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 223 KB

english, 2010

56

A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability

Grasser, Tibor, Wagner, Paul-JÜrgen, Hehenberger, Philipp, Goes, Wolfgang, Kaczer, Ben

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 1.32 MB

english, 2008

57

Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications

Degraeve, R., Kaczer, B., De Keersgieter, A., Groeseneken, G.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2001

Language:

english

File:

PDF, 273 KB

english, 2001

58

[IEEE 2011 21st International Conference on Noise and Fluctuations (ICNF) - Toronto, ON, Canada (2011.06.12-2011.06.16)] 2011 21st International Conference on Noise and Fluctuations - Advanced modeling of oxide defects for random telegraph noise

Goes, W., Schanovsky, F., Grasser, T., Reisinger, H., Kaczer, B.

Year:

2011

Language:

english

File:

PDF, 514 KB

english, 2011

59

Extraction of the Random Component of Time-Dependent Variability Using Matched Pairs

Kaczer, Ben, Franco, Jacopo, Roussel, Philippe J., Groeseneken, Guido, Chiarella, Thomas, Horiguchi, Naoto, Grasser, Tibor

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 618 KB

english, 2015

60

[IEEE 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - South Lake Tahoe, CA, USA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Franco, J., Kaczer, B., Roussel, J., Cho, M., Grasser, T., Mitard, J., Arimura, H., Witters, L., Cott, D., Waldron, N., Zhou, D., Vais, A., Lin, D., Alian, A., Pourghaderi, M. A., Martens, K., Sioncke

Year:

2014

Language:

english

File:

PDF, 791 KB

english, 2014

61

ECS Transactions [ECS 26th Symposium on Microelectronics Technology and Devices (SBMicro 2011) - Joao Pessoa, Brazil (August 30 - September 2, 2011)] - (Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Simoen, Eddy, Kaczer, Ben, Toledano-Luque, Maria, Claeys, Cor

Year:

2011

Language:

english

File:

PDF, 699 KB

english, 2011

62

NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark

Grasser, Tibor, Rott, Karina, Reisinger, Hans, Waltl, Michael, Schanovsky, Franz, Kaczer, Ben

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 1.50 MB

english, 2014

63

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Reliability aware simulation flow: From TCAD calibration to circuit level analysis

Hussin, Razaidi, Gerrer, Louis, Ding, Jie, Amaroso, Salvatore Maria, Wang, Liping, Semicic, Marco, Weckx, Pieter, Franco, Jacopo, Vanderheyden, Annelies, Vanhaeren, Danielle, Horiguchi, Naoto, Kaczer,

Year:

2015

Language:

english

File:

PDF, 1.43 MB

english, 2015

64

[IEEE 2015 IEEE International Symposium on Circuits and Systems (ISCAS) - Lisbon, Portugal (2015.5.24-2015.5.27)] 2015 IEEE International Symposium on Circuits and Systems (ISCAS) - Characterization and modeling of reliability issues in nanoscale devices

Rzepa, G., Goes, W., Kaczer, B., Grasser, T.

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

65

[IEEE 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Rome, Italy (2015.7.27-2015.7.30)] 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) - Multi-scale modeling of self-heating effects in silicon nanoscale devices

Qazi, S. S., Shaik, A. R., Daugherty, R. L., Laturia, A., Vasileska, D., Guo, X., Bury, E., Kaczer, B., Raleva, K.

Year:

2015

Language:

english

File:

PDF, 986 KB

english, 2015

66

A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs

Procel, L. M., Crupi, F., Trojman, L., Franco, J., Kaczer, B.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 203 KB

english, 2016

67

[IEEE 2015 Symposium on VLSI Technology - Kyoto, Japan (2015.6.16-2015.6.18)] 2015 Symposium on VLSI Technology (VLSI Technology) - Characterization of self-heating in high-mobility Ge FinFET pMOS devices

Bury, E., Kaczer, B., Mitard, J., Collaert, N., Khatami, N.S., Aksamija, Z., Vasileska, D., Raleva, K., Witters, L., Hellings, G., Linten, D., Groeseneken, G., Thean, A.

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

68

[IEEE 2015 IEEE Custom Integrated Circuits Conference - CICC 2015 - San Jose, CA, USA (2015.9.28-2015.9.30)] 2015 IEEE Custom Integrated Circuits Conference (CICC) - Characterization and simulation methodology for time-dependent variability in advanced technologies

Weckx, P., Kaczer, B., Raghavan, P., Franco, J., Simicic, M., Roussel, Ph. J., Linten, D., Thean, A., Verkest, D., Catthoor, F., Groeseneken, G.

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

69

[IEEE 2015 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2015.10.11-2015.10.15)] 2015 IEEE International Integrated Reliability Workshop (IIRW) - On the temperature behavior of hot-carrier degradation

Tyaginov, S., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T.

Year:

2015

Language:

english

File:

PDF, 336 KB

english, 2015

70

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Kaczer, B., Franco, J., Weckx, P., Roussel, Ph.J., Simicic, M., Putcha, V., Bury, E., Cho, M., Degraeve, R., Linten, D., Groeseneken, G., Debacker, P., Parvais, B., Raghavan, P., Catthoor, F., Rzepa,

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 3.17 MB

english, 2016

71

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - NBTI in Replacement Metal Gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals

Franco, J., Kaczer, B., Chasin, A., Mertens, H., Ragnarsson, L.-A., Ritzenthaler, R., Mukhopadhyay, S., Arimura, H., Roussel, Ph. J., Bury, E., Horiguchi, N., Linten, D., Groeseneken, G., Thean, A.

Year:

2016

Language:

english

File:

PDF, 530 KB

english, 2016

72

Optics of Thin Films

Vašíček, A., Watney‐Kaczér, H., Chako, Nicholas

Journal:

Year:

1961

Language:

english

File:

PDF, 647 KB

english, 1961

73

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Benchmarking time-dependent variability of junctionless nanowire FETs

Kaczer, B., Rzepa, G., Franco, J., Weckx, P., Chasin, A., Putcha, V., Bury, E., Simicic, M., Roussel, Ph., Hellings, G., Veloso, A., Matagne, Ph., Grasser, T., Linten, D.

Year:

2017

Language:

english

File:

PDF, 683 KB

english, 2017

74

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Kaczer, B., Franco, J., Weckx, P., Roussel, Ph.J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 1.17 MB

english, 2018

75

Comphy — A compact-physics framework for unified modeling of BTI

Rzepa, G., Franco, J., O’Sullivan, B., Subirats, A., Simicic, M., Hellings, G., Weckx, P., Jech, M., Knobloch, T., Waltl, M., Roussel, P.J., Linten, D., Kaczer, B., Grasser, T.

Journal:

Microelectronics Reliability

Year:

2018

Language:

english

File:

PDF, 5.36 MB

english, 2018

76

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Self-heating-aware CMOS reliability characterization using degradation maps

Bury, E., Chasin, A., Kaczer, B., Chuang, K.-H., Franco, J., Simicic, M., Weckx, P., Linten, D.

Year:

2018

Language:

english

File:

PDF, 1.29 MB

english, 2018

77

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space

Franco, J., Kaczer, B., Chasin, A., Bury, E., Linten, D.

Year:

2018

Language:

english

File:

PDF, 607 KB

english, 2018

78

Interference Conditions of the Reconsolidation Process in Humans: The Role of Valence and Different Memory Systems

Fernández, Rodrigo S., Bavassi, Luz, Kaczer, Laura, Forcato, Cecilia, Pedreira, María E.

Journal:

Frontiers in Human Neuroscience

Year:

2016

Language:

english

File:

PDF, 3.61 MB

english, 2016

79

Analysis of the Features of Hot-Carrier Degradation in FinFETs

Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T.

Journal:

Year:

2018

Language:

english

File:

PDF, 895 KB

english, 2018

80

Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations

Simicic, Marko, Weckx, Pieter, Parvais, Bertrand, Roussel, Philippe, Kaczer, Ben, Gielen, Georges

Journal:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Year:

2018

Language:

english

File:

PDF, 2.65 MB

english, 2018

81

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - (Invited) Recent insights in CMOS reliability characterization by the use of degradation maps

Bury, E., Chasin, A., Kaczer, B., Chuang, K.-H., Franco, J., Simicic, M., Weckx, P., Linten, D.

Year:

2018

Language:

english

File:

PDF, 7.19 MB

english, 2018

82

Animacy as a memory enhancer during novel word learning: evidence from orthographic and semantic memory tasks

Laurino, Julieta, Kaczer, Laura

Journal:

Year:

2019

Language:

english

File:

PDF, 1.66 MB

english, 2019

83

[IEEE ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Cracow, Poland (2019.9.23-2019.9.26)] ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) - Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants

Makarov, Alexander, Linten, Dimitri, Tyaginov, Stanislav, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Jech, Markus, Grasser, Tibor

Year:

2019

Language:

english

File:

PDF, 5.41 MB

english, 2019

84

Maradona in our minds: The FIFA World Cup as a way to address collective memory properties

Bavassi, Luz, Kaczer, Laura, Fernández, Rodrigo S.

Journal:

Memory & Cognition

Year:

2019

File:

PDF, 956 KB

2019

85

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I.

Year:

2020

File:

PDF, 3.12 MB

2020

86

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Makarov, Alexander, Roussel, Philippe, Bury, Erik, Vandemaele, Michiel, Spessot, Alessio, Linten, Dimitri, Kaczer, Ben, Tyaginov, Stanislav

Journal:

Year:

2020

File:

PDF, 2.77 MB

2020

87

Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability

Putcha, Vamsi, Franco, Jacopo, Vais, Abhitosh, Kaczer, Ben, Xie, Qi, Maes, Jan Willem, Tang, Fu, Givens, Michael, Collaert, Nadine, Linten, Dimitri, Groeseneken, Guido

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 4.85 MB

2020

88

Domain period determination in CoCr films

J. Šimšová, R. Gemperle, J.C. Lodder, J. Kaczér, L. Murtinová, S. Saic, I. Tomáš

Journal:

Thin Solid Films

Year:

1990

Language:

english

File:

PDF, 1.26 MB

english, 1990

89

On the entropy of a ferromagnetic domain structure

Journal:

Physics Letters A

Year:

1972

Language:

english

File:

PDF, 139 KB

english, 1972

90

Ferromagnetic resonance of two coaxial cylinders

J. Kaczér, Z. Klem

Journal:

Year:

1977

Language:

english

File:

PDF, 137 KB

english, 1977

91

Bubble mode resonance

J. Kaczér, R. Gemperle

Journal:

Year:

1977

Language:

english

File:

PDF, 482 KB

english, 1977

92

Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements

S. Aresu, W. De Ceuninck, R. Degraeve, B. Kaczer, G. Knuyt, L. De Schepper

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 219 KB

english, 2005

93

Relevance of the pulsed capacitance–voltage measurement technique for the optimization of SrBi2Ta2O9/high-k stack combination to be used in FeFET devices

Z. Xu, L. Goux, B. Kaczer, H. Vander Meeren, D.J. Wouters, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 360 KB

english, 2006

94

Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation

B. Kaczer, B. De Jaeger, G. Nicholas, K. Martens, R. Degraeve, M. Houssa, G. Pourtois, F. Leys, M. Meuris, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 779 KB

english, 2007

95

Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

A. Shickova, B. Kaczer, E. Simoen, P. Verheyen, G. Eneman, M. Jurczak, P. Absil, H. Maes, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 316 KB

english, 2007

96

Sr excess accommodation in ALD grown SrTiO3 and its impact on the dielectric response

S. Clima, G. Pourtois, N. Menou, M. Popovici, A. Rothschild, B. Kaczer, S. Van Elshocht, X.P. Wang, J. Swerts, D. Pierreux, S. De Gendt, D.J. Wouters, J.A. Kittl

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 507 KB

english, 2009

97

High-k dielectrics for future generation memory devices (Invited Paper)

J.A. Kittl, K. Opsomer, M. Popovici, N. Menou, B. Kaczer, X.P. Wang, C. Adelmann, M.A. Pawlak, K. Tomida, A. Rothschild, B. Govoreanu, R. Degraeve, M. Schaekers, M. Zahid, A. Delabie, J. Meersschaut,

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 1.20 MB

english, 2009

98

On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs

J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, P. Hehenberger, T. Grasser, J. Mitard, G. Eneman, L. Witters, T.Y. Hoffmann, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.37 MB

english, 2011

99

Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 1.08 MB

english, 2011

100

Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

F.E. Leys, R. Bonzom, B. Kaczer, T. Janssens, W. Vandervorst, B. De Jaeger, J. Van Steenbergen, K. Martens, D. Hellin, J. Rip, G. Dilliway, A. Delabie, P. Zimmerman, M. Houssa, A. Theuwis, R. Loo, M.

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 378 KB

english, 2006