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51

X-ray and transmission electron microscopy characterization of twinned CdO thin films grown ona-plane sapphire by metalorganic vapour phase epitaxy

M.C. Martínez-Tomás, J. Zúñiga-Pérez, P. Vennéguès, O. Tottereau, V. Muñoz-Sanjosé

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 334 KB

english, 2007

52

Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties

C. Chauvet, E. Tournié, P. Vennéguès, J. P. Faurie

Journal:

Journal of Electronic Materials

Year:

2000

Language:

english

File:

PDF, 513 KB

english, 2000

53

Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

N. Kriouche, M. Leroux, P. Vennéguès, M. Nemoz, G. Nataf, P. de Mierry

Journal:

Nanoscale Research Letters

Year:

2010

Language:

english

File:

PDF, 349 KB

english, 2010

54

Symmetry and optical properties of wurtzite nanostructures with thecaxis in the layer plane

P. Tronc, P. Vennéguès

Journal:

Physics of the Solid State

Year:

2008

Language:

english

File:

PDF, 200 KB

english, 2008

55

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

Schenk, H. P. D., Nemoz, M., Korytov, M., Vennegues, P., Drager, A. D., Hangleiter, A.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 536 KB

english, 2008

56

Growth of Co/Ru strained superlattices

D. Muller, K. Ounadjela, P. Vennegues, V. Pierron-Bohnes, A. Arbaoui, J.P. Jay, A. Dinia, P. Panissod

Journal:

Journal of Magnetism and Magnetic Materials

Year:

1992

Language:

english

File:

PDF, 374 KB

english, 1992

57

Correlation between the structural and transport properties of granular CoAg systems prepared by MBE

A. Azizi, S.M. Thompson, K. Ounadjela, J. Gregg, P. Vennegues, A. Dinia, J. Arabski, C. Fermon

Journal:

Journal of Magnetism and Magnetic Materials

Year:

1995

Language:

english

File:

PDF, 189 KB

english, 1995

58

High resolution transmission electron microscopy studies of Co/Ru bilayers

A. Michel, G.Z. Pan, V. Pierron-Bohnes, P. Vennéguès, M.C. Cadeville

Journal:

Journal of Magnetism and Magnetic Materials

Year:

1996

Language:

english

File:

PDF, 169 KB

english, 1996

59

Substrate free GaAs photovoltaic cells on Pd-coated silicon with a 20% AM1.5 efficiency

Omnes, F., Guillaume, J.-C., Nataf, G., Jager-Waldau, D., Vennegues, P., Gibart, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1996

Language:

english

File:

PDF, 1.17 MB

english, 1996

60

Anisotropic chemical etching of semipolar {10ar {1}ar {1}}mbox {/} {10ar {1}{+}1} ZnO crystallographic planes: polarity versus dangling bonds

Palacios-Lidón, E, Pérez-García, B, Vennéguès, P, Colchero, J, Muñoz-Sanjosé, V, Zúñiga-Pérez, J

Journal:

Year:

2009

Language:

english

File:

PDF, 1.06 MB

english, 2009

61

The ternary system holmium-boron-carbon; isothermal section at 1500 °C

J. Bauer, P. Venneguès, J.L. Vergneau

Journal:

Journal of the Less Common Metals

Year:

1985

Language:

english

File:

PDF, 323 KB

english, 1985

62

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B.

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.65 MB

english, 2012

63

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennéguès, B.S. Diaby, H. Kim-Chauveau, L. Bodiou, H.P.D. Schenk, E. Frayssinet, R.W. Martin, I.M. Watson

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 1.61 MB

english, 2012

64

Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization

Guhne, T., Bougrioua, Z., Vennegues, P., Leroux, M., Albrecht, M.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 920 KB

english, 2007

65

Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

Vigue, F., Vennegues, P., Deparis, C., Vezian, S., Laugt, M., Faurie, J.-P.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 784 KB

english, 2001

66

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Khoury, M, Courville, A, Poulet, B, Teisseire, M, Beraudo, E, Rashid, M J, Frayssinet, E, Damilano, B, Semond, F, Tottereau, O, Vennéguès, P

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1.69 MB

english, 2013

67

MBE-grown high-quality (Al,Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs

Fernández, S, Naranjo, F B, Calle, F, Sánchez-García, M A, Calleja, E, Vennegues, P, Trampert, A, Ploog, K H

Journal:

Semiconductor Science and Technology

Year:

2001

Language:

english

File:

PDF, 284 KB

english, 2001

68

AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy

Rennesson, S., Damilano, B., Vennéguès, P., Chenot, S., Cordier, Y.

Journal:

phys stat sol (a)

Year:

2013

Language:

english

File:

PDF, 381 KB

english, 2013

69

Non-polar a -plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy

Chauveau, J-M, Laügt, M, Venneguès, P, Teisseire, M, Lo, B, Deparis, C, Morhain, C, Vinter, B

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 564 KB

english, 2008

70

Strong decrease of the activation energy as a function of A1 content in FeAlx alloys (x ≦ 30 at.%) deduced from kinetic measurements of ordering

Vennégues, P., Cadeville, M.C., Pierron-Bohnes, V., Afyouni, M.

Journal:

Acta Metallurgica et Materialia

Year:

1990

Language:

english

File:

PDF, 1.05 MB

english, 1990

71

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

Cordier, Yvon, Frayssinet, Eric, Portail, Marc, Zielinski, Marcin, Chassagne, Thierry, Korytov, Maxim, Courville, Aimeric, Roy, Sébastien, Nemoz, Maud, Chmielowska, Magdalena, Vennéguès, Philippe, Dav

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 2.08 MB

english, 2014

72

Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

Xia, Y., Brault, J., Vennéguès, P., Nemoz, M., Teisseire, M., Leroux, M., Chauveau, J.-M.

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 2.33 MB

english, 2014

73

Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

Tendille, Florian, De Mierry, Philippe, Vennéguès, Philippe, Chenot, Sebastien, Teisseire, Monique

Journal:

Journal of Crystal Growth

Year:

2014

Language:

english

File:

PDF, 2.55 MB

english, 2014

74

Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited on M -Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Vennéguès, Philippe, Bougrioua, Zahia, Guehne, Tobias

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 525 KB

english, 2007

75

Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties

Coulon, P. M., Mexis, M., Teisseire, M., Jublot, M., Vennéguès, P., Leroux, M., Zuniga-Perez, J.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 2.42 MB

english, 2014

76

Quantitative determination of compositional profiles using HAADF image simulations

El Bouayadi, R., Korytov, M., van Aken, P. A., Vennéguès, P., Benaissa, M.

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 613 KB

english, 2014

77

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cordier, Y., Frayssinet, E., Chmielowska, M., Nemoz, M., Courville, A., Vennéguès, P., Mierry, P. De, Chenot, S., Camus, J., Aissa, K. Ait, Simon, Q., Brizoual, L. Le, Djouadi, M. A., Defrance, N., Le

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 654 KB

english, 2014

78

Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al 0.5 Ga 0.5 N quantum dots: strong effect of capping layer and atmospheric condition

Kim, Je-Hyung, Elmaghraoui, Donia, Leroux, Mathieu, Korytov, Maxim, Vennéguès, Philippe, Jaziri, Sihem, Brault, Julien, Cho, Yong-Hoon

Journal:

Year:

2014

Language:

english

File:

PDF, 1.70 MB

english, 2014

79

Heteroepitaxial growth of BeSe on vicinal Si(001) surfaces

Chauvet, C., Venneguès, P., Brunet, P., Tournié, E., Faurie, J. P.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 835 KB

english, 1998

80

-axis in the layer plane

Tronc, P., Vennéguès, P.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 219 KB

english, 2008

81

GaN formed by epitaxial lateral overgrowth on sapphire

Gühne, T., Bougrioua, Z., Laügt, S., Nemoz, M., Vennéguès, P., Vinter, B., Leroux, M.

Journal:

Physical Review B

Year:

2008

Language:

english

File:

PDF, 861 KB

english, 2008

82

Atomic structure of pyramidal defects in Mg-doped GaN

Vennéguès, P., Leroux, M., Dalmasso, S., Benaissa, M., De Mierry, P., Lorenzini, P., Damilano, B., Beaumont, B., Massies, J., Gibart, P.

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 1.17 MB

english, 2003

83

In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)

Vézian, S., Massies, J., Semond, F., Grandjean, N., Vennéguès, P.

Journal:

Physical Review B

Year:

2000

Language:

english

File:

PDF, 580 KB

english, 2000

84

Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

Damilano, Benjamin, Kim-Chauveau, Hyonju, Frayssinet, Eric, Brault, Julien, Hussain, Sakhawat, Lekhal, Kaddour, Vennéguès, Philippe, Mierry, Philippe De, Massies, Jean

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 1.38 MB

english, 2013

85

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - Control of the polarity of GaN epilayers using a Mg adsorption layer

Grandjean, N., Talent, M.-L., Dussaigne, A., Vennegues, P., Tournie, E.

Year:

2002

Language:

english

File:

PDF, 134 KB

english, 2002

86

Ferromagnetic resonance determination of fcc→hcp structural change in epitaxial Co/Mn superlattices

Ounadjela, K., Henry, Y., Farle, M., Vennegues, P.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 742 KB

english, 1994

87

High-quality distributed Bragg reflectors based on Al[sub x]Ga[sub 1−x]N/GaN multilayers grown by molecular-beam epitaxy

Fernández, S., Naranjo, F. B., Calle, F., Sánchez-Garcı́a, M. A., Calleja, E., Vennegues, P., Trampert, A., Ploog, K. H.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 415 KB

english, 2001

88

Polar and semipolar GaN/Al 0.5 Ga 0.5 N nanostructures for UV light emitters

Brault, J, Rosales, D, Damilano, B, Leroux, M, Courville, A, Korytov, M, Chenot, S, Vennéguès, P, Vinter, B, De Mierry, P, Kahouli, A, Massies, J, Bretagnon, T, Gil, B

Journal:

Semiconductor Science and Technology

Year:

2014

Language:

english

File:

PDF, 1.46 MB

english, 2014

89

Blue Light-Emitting Diodes Grown on ZnO Substrates

Xia, Yuanyang, Brault, Julien, Damilano, Benjamin, Chenot, Sébastien, Vennéguès, Philippe, Nemoz, Maud, Teisseire, Monique, Leroux, Mathieu, Obrecht, Rémy, Robin, Ivan-Christophe, Santailler, Jean-Lou

Journal:

Applied Physics Express

Year:

2013

Language:

english

File:

PDF, 1.29 MB

english, 2013

90

AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

Brault, Julien, Damilano, Benjamin, Vinter, Borge, Vennéguès, Philippe, Leroux, Mathieu, Kahouli, Abdelkarim, Massies, Jean

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 525 KB

english, 2013

91

Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on (11\bar20) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Vennegues, Philippe, Founta, Sebastien, Mariette, Henri, Daudin, Bruno

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 237 KB

english, 2010

92

Growth of semipolar (202̄1) GaN layers on patterned silicon (114) 1° off by Metal Organic Vapor Phase Epitaxy

Khoury, M., Leroux, M., Nemoz, M., Feuillet, G., Zúñiga-Pérez, J., Vennéguès, P.

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 899 KB

english, 2015

93

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m - and r -plane Sapphire Substrates

Vennegues, Philippe, Zhu, Tiankai, Bougrioua, Zahia, Martin, Denis, Zuniga-Perez, Jesus, Grandjean, Nicolas

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 315 KB

english, 2009

94

Plan-view microstructures of Co/Ru bilayers

Pan, G.Z., Michel, A., Pierron-Bohnes, V., Vennéguès, P., Cadeville, M.C.

Journal:

Journal of Materials Research

Year:

1995

Language:

english

File:

PDF, 5.29 MB

english, 1995

95

Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

Pérez-Tomás, Amador, Vellvehi, Miquel, Mestres, Narcis, Millán, José, Vennegues, P., Stoemenos, J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 682 KB

english, 2006

96

High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO

Lahrèche, H., Bousquet, V., Laügt, M., Tottereau, Olivier, Vennéguès, P., Beaumont, B., Gibart, Pierre

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 337 KB

2000

97

SRO Relaxation in NiAl Alloys

Afyouni, M., Cadeville, M.C., Pierron-Bohnes, Veronique, Vennéguès, P.

Journal:

Defect and Diffusion Forum

Year:

1990

File:

PDF, 301 KB

1990

98

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Guhne, Tobias, Bougrioua, Zahia, Albrecht, Martin, Vennéguès, Phillippe, Leroux, Mathieu, Laügt, Marguerite, Ndiaye, Sosse, Teisseire, Monique, Nguyen, Luan, Gibart, Pierre

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 1.97 MB

english, 2006

99

Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator

Pérez-Tomás, A., Godignon, P., Montserrat, J., Millán, J., Mestres, N., Vennegues, P., Stoemenos, J.

Journal:

Journal of The Electrochemical Society

Year:

2005

Language:

english

File:

PDF, 976 KB

english, 2005

100

Comparative Study Of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

Vennegues, P., Haffouz, S., Bouille, A., Leroux, M., Beaumont, B.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 1.70 MB

english, 1998

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