62

DEVICE PHYSICS:Pushing the Limits

Year:
1999
Language:
english
File:
PDF, 707 KB
english, 1999
64

Radiation-induced precipitation at grain boundaries in Ni-8 at.% Si

Year:
1991
Language:
english
File:
PDF, 1.43 MB
english, 1991
70

Depth profiles of nickel ion damage in helium-implanted nickel

Year:
1982
Language:
english
File:
PDF, 2.21 MB
english, 1982
80

Transient diffusion of low-concentration B in Si due to 29Si implantation damage

Year:
1990
Language:
english
File:
PDF, 483 KB
english, 1990
91

The effect of pulsed irradiation on microstructural evolution

Year:
1987
Language:
english
File:
PDF, 1.26 MB
english, 1987
92

Scaling Transistors into the Deep-Submicron Regime

Year:
2000
Language:
english
File:
PDF, 213 KB
english, 2000