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51

Ethnobotanical Study of Some Aromatic and Medicinal Plants in the Middle Atlas Mountains of Morocco

Midaoui, Mohammed El, Maataoui, Abdelwahed, Benbella, Mohamed, Houssa, Abdelhadi Ait, Labazi, Nadia

Journal:

Natural Product Communications

Year:

2011

Language:

english

File:

PDF, 225 KB

english, 2011

52

First-Principles Study of the Contact Resistance at 2D Metal/2D Semiconductor Heterojunctions

Houssa, Michel, Meng, Ruishen, Afanasâev, Valery, Stesmans, AndrÃ©

Journal:

Applied Sciences

Year:

2020

File:

PDF, 5.68 MB

2020

53

[Frontiers of Nanoscience] Computational Modelling of Nanomaterials Volume 17 || Contact resistance at 2D metal/semiconductor heterostructures

Year:

2020

File:

PDF, 159 KB

2020

54

Magnetic Properties and Critical Behaviour of the B-Spinel CdCr2xIn2—2xS4 (0.9 ≤ x ≤ 1)

M. Hamedoun, M. Houssa, Y. Cherriet, F. Z. Bakkali

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 140 KB

english, 1999

55

Critical Exponents and Magnetic Short-Range Order in the System CdCr2xIn2–2xS4

M. Hamedoun, Y. Cherriet, M. Houssa

Journal:

physica status solidi (b)

Year:

2000

Language:

english

File:

PDF, 109 KB

english, 2000

56

Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x)ON/TaN based pMOSFETs

M. Aoulaiche, M. Houssa, R. De graeve, G. Groeseneken, S. De Gendt, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 245 KB

english, 2005

57

Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation

B. Kaczer, B. De Jaeger, G. Nicholas, K. Martens, R. Degraeve, M. Houssa, G. Pourtois, F. Leys, M. Meuris, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 779 KB

english, 2007

58

Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS

C. Merckling, J. Penaud, D. Kohen, F. Bellenger, A. Alian, G. Brammertz, M. El-Kazzi, M. Houssa, J. Dekoster, M. Caymax, M. Meuris, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 420 KB

english, 2009

59

Experimental and theoretical investigation of defects at (1 0 0) Si1−xGex/oxide interfaces

M. Houssa, G. Pourtois, M. Meuris, M.M. Heyns, V.V. Afanas’ev, A. Stesmans

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 717 KB

english, 2011

60

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M.M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J.W. Seo, L.V. Goncharova

Journal:

Materials Science and Engineering: B

Year:

2006

Language:

english

File:

PDF, 870 KB

english, 2006

61

Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

F.E. Leys, R. Bonzom, B. Kaczer, T. Janssens, W. Vandervorst, B. De Jaeger, J. Van Steenbergen, K. Martens, D. Hellin, J. Rip, G. Dilliway, A. Delabie, P. Zimmerman, M. Houssa, A. Theuwis, R. Loo, M.

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 378 KB

english, 2006

62

Impact of germanium surface passivation on the leakage current of shallow planar p–n junctions

A. Satta, G. Nicholas, E. Simoen, M. Houssa, A. Dimoulas, B. De Jaeger, J. Van Steenbergen, M. Meuris

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 233 KB

english, 2006

63

Impact of defects on the high-κ/MG stack: The electrical characterization challenge

Luigi Pantisano, L.-Å. Ragnarsson, M. Houssa, R. Degraeve, G. Groeseneken, T. Schram, S. Degendt, M. Heyns, V. Afanas’ev, A. Stesmans

Journal:

Materials Science in Semiconductor Processing

Year:

2006

Language:

english

File:

PDF, 181 KB

english, 2006

64

Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

V.V. Afanas’ev, A. Stesmans, A. Delabie, F. Bellenger, M. Houssa, R.R. Lieten, C. Merckling, J. Penaud, D.P. Brunco, M. Meuris

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 394 KB

english, 2008

65

Thermal conductivity of an untwinned YBa2Cu3O7−δ single crystal: An alternative interpretation in terms of carrier condensation

M. Ausloos, M. Houssa

Journal:

Physica C: Superconductivity

Year:

1993

Language:

english

File:

PDF, 320 KB

english, 1993

66

Bi-based 2223 superconducting polycrystalline materials prepared by either a solid state route or a glassy ‘matrix’ precursor method: Chemical analysis as well as electrical and thermal transport properties

R. Cloots, H. Bougrine, M. Houssa, S. Stassen, L. D'Urzo, A. Rulmont, M. Ausloos

Journal:

Physica C: Superconductivity

Year:

1994

Language:

english

File:

PDF, 769 KB

english, 1994

67

Thermoelectric power and thermal conductivity in YBa2(Cu1−xFex)3O7−δ with or without excess of copper oxide

H. Bougrine, M. Ausloos, M. Houssa, M. Mehbod

Journal:

Physica C: Superconductivity

Year:

1994

Language:

english

File:

PDF, 212 KB

english, 1994

68

Electronic thermal conductivity of high critical temperature superconductors

M. Houssa, M. Ausloos

Journal:

Physica C: Superconductivity

Year:

1994

Language:

english

File:

PDF, 207 KB

english, 1994

69

Thermal conductivity of high-Tc superconductors: effect of Van Hove singularities

M. Houssa, M. Ausloos

Journal:

Physica C: Superconductivity

Year:

1996

Language:

english

File:

PDF, 533 KB

english, 1996

70

Influence of a Van Hove singularity on the electronic specific heat of high-Tc superconductors

S. Dorbolo, M. Houssa, M. Ausloos

Journal:

Physica C: Superconductivity

Year:

1996

Language:

english

File:

PDF, 403 KB

english, 1996

71

Experimental and theoretical study of Ge surface passivation

M. Houssa, G. Pourtois, B. Kaczer, B. De Jaeger, F.E. Leys, D. Nelis, K. Paredis, A. Vantomme, M. Caymax, M. Meuris, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 930 KB

english, 2007

72

A first-principles study of the structural and electronic properties of III–V/thermal oxide interfaces

M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, A. Stesmans, M. Meuris, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 896 KB

english, 2009

73

Germanium FETs and capacitors with rare earth CeO2/HfO2 gates

A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, P. Tsipas, D.P. Brunco, G. Nicholas, J. Van Steenbergen, F. Bellenger, M. Houssa, M. Caymax, M. Meuris

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 517 KB

english, 2007

74

Electronic properties of (1 0 0)Ge/Ge(Hf)O2 interfaces: A first-principles study

M. Houssa, G. Pourtois, M. Caymax, M. Meuris, M.M. Heyns

Journal:

Surface Science

Year:

2008

Language:

english

File:

PDF, 453 KB

english, 2008

75

Adsorption of molecular oxygen on the reconstructed β2(2 × 4)-GaAs(0 0 1) surface: A first-principles study

M. Scarrozza, G. Pourtois, M. Houssa, M. Caymax, M. Meuris, M.M. Heyns, A. Stesmans

Journal:

Surface Science

Year:

2009

Language:

english

File:

PDF, 414 KB

english, 2009

76

Diacylglycerol kinases in signal transduction

Wim J. van Blitterswijk, Brahim Houssa

Journal:

Chemistry and Physics of Lipids

Year:

1999

Language:

english

File:

PDF, 212 KB

english, 1999

77

Computer simulations of dipolar liquid crystal phases

Mohammed Houssa, Simon C. McGrother, Luis F. Rull

Journal:

Computer Physics Communications

Year:

1999

Language:

english

File:

PDF, 34 KB

english, 1999

78

Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides

M Houssa, T Nigam, P.W Mertens, M.M Heyns

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 363 KB

english, 1999

79

Soft breakdown in very thin Ta2O5 gate dielectric layers

M Houssa, P.W Mertens, M.M Heyns, J.S Jeon, A Halliyal, B Ogle

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 198 KB

english, 2000

80

Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry

M.L. Monaghan, T. Nigam, M. Houssa, S. De Gendt, H.P. Urbach, P.K. de Bokx

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 218 KB

english, 2000

81

Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements

V.V Afanas’ev, M Houssa, A Stesmans, G.J Adriaenssens, M.M Heyns

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 132 KB

english, 2001

82

Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model

M Houssa, V.V Afanas’ev, A Stesmans, M.M Heyns

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 122 KB

english, 2001

83

X-ray irradiation effect on the reliability of ultra-thin gate oxides and oxynitrides

M. Houssa, S. De Gendt, P. de Bokx, P.W. Mertens, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

1999

Language:

english

File:

PDF, 293 KB

english, 1999

84

Effects of granulometric and mineralogical composition on spectral reflectance of soils in a Sahelian area

Rachida Houssa, Jean-Claude Pion, Hervé Yésou

Journal:

ISPRS Journal of Photogrammetry and Remote Sensing

Year:

1996

Language:

english

File:

PDF, 1.19 MB

english, 1996

85

Activation of latent DNA-replication origins: a universal effect of cytokinins

Claude Houssa, Georges Bernier, Alexandra Pieltain, Jean-Marie Kinet, Annie Jacqmard

Journal:

Year:

1994

Language:

english

File:

PDF, 462 KB

english, 1994

86

Activation of replicon origins as a possible target for cytokinins in shoot meristems ofSinapis

C. Houssa, A. Jacqmard, G. Bernier

Journal:

Year:

1990

Language:

english

File:

PDF, 700 KB

english, 1990

87

Evidence of d-wave pairing in the thermal conductivity of YBa2Cu3O7−dand Bi2Sr2CaCu2O8single crystals

M. Houssa, M. Ausloos

Journal:

Zeitschrift für Physik B Condensed Matter

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

88

A Model for Monetary Policy Analysis for Sub-Saharan Africa

Romain Houssa, Christopher Otrok, Radu Puslenghea

Journal:

Open Economies Review

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

89

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Valery Afanas’ev, André Stesmans

Journal:

Year:

2012

Language:

english

File:

PDF, 367 KB

english, 2012

90

In-plane electronic thermal conductivity of layered d-wave high-Tc superconductors

M. Houssa, M. Ausloos

Journal:

Physica C: Superconductivity

Year:

1996

Language:

english

File:

PDF, 714 KB

english, 1996

91

Interface control of high-k gate dielectrics on Ge

M. Caymax, M. Houssa, G. Pourtois, F. Bellenger, K. Martens, A. Delabie, S. Van Elshocht

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 686 KB

english, 2008

92

Effect of fixed dielectric charges on tunnelling transparency in MIM and MIS structures

S Bernardini, P Masson, M Houssa

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 211 KB

english, 2004

93

Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors

A. Dimoulas, G. Vellianitis, G. Mavrou, E.K. Evangelou, K. Argyropoulos, M. Houssa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 326 KB

english, 2005

94

Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

F. Crupi, C. Pace, G. Cocorullo, G. Groeseneken, M. Aoulaiche, M. Houssa

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 159 KB

english, 2005

95

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

L. Trojman, L.-Å. Ragnarsson, L. Pantisano, G.S. Lujan, M. Houssa, T. Schram, F. Cubaynes, M. Schaekers, A. Van Ammel, G. Groeseneken, S. De Gendt, M. Heyns

Journal:

Microelectronic Engineering

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

96

Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

S. Van Elshocht, M. Caymax, T. Conard, S. De Gendt, I. Hoflijk, M. Houssa, F. Leys, R. Bonzom, B. De Jaeger, J. Van Steenbergen, W. Vandervorst, M. Heyns, M. Meuris

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 214 KB

english, 2006

97

Interface engineering for Ge metal-oxide–semiconductor devices

A. Dimoulas, D.P. Brunco, S. Ferrari, J.W. Seo, Y. Panayiotatos, A. Sotiropoulos, T. Conard, M. Caymax, S. Spiga, M. Fanciulli, Ch. Dieker, E.K. Evangelou, S. Galata, M. Houssa, M.M. Heyns

Journal:

Thin Solid Films

Year:

2007

Language:

english

File:

PDF, 755 KB

english, 2007

98

Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures

M. Houssa, J.L. Autran, M.M. Heyns, A. Stesmans

Journal:

Applied Surface Science

Year:

2003

Language:

english

File:

PDF, 112 KB

english, 2003

99

Contributions of the polygraphy in the research of vascular modifications in spinal injuries

Houssa, P, Noel, G, Heilporn, A

Journal:

Year:

1973

Language:

english

File:

PDF, 229 KB

english, 1973

100

[IEEE ESSDERC 2003. 33rd European Solid-State Device Research - ESSDERC '03 - Estoril, Portugal (16-18 Sept. 2003)] Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) - Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements

Bernardini, S., Masson, P., Houssa, M., Lalande, F.

Year:

2003

Language:

english

File:

PDF, 216 KB

english, 2003