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1

Model Calculations of SiC Oxide Growth Rate at Various Oxidation Temperatures Based on the Silicon and Carbon Emission Model

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 348 KB

english, 2010

2

Physics and Technology of Silicon Carbide Devices || Applications of SiC-Based Thin Films in Electronic and MEMS Devices

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 443 KB

english, 2012

3

Model Calculation of SiC Oxide Growth Rate Based on the Silicon and Carbon Emission Model

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 303 KB

english, 2009

4

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

Miyano, Yutaro, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 394 KB

english, 2015

5

A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 141 KB

english, 2009

6

Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

Narahara, Takuma, Sato, Shin Ichiro, Kojima, Kazutoshi, Yamazaki, Yuichi, Hijikata, Yasuto, Ohshima, Takeshi

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 693 KB

2020

7

Physics and Technology of Silicon Carbide Devices || Ion Synthesis of SiC and Its Instability at High Temperatures

Hijikata, Yasuto

Year:

2012

File:

PDF, 8.11 MB

2012

8

Optical and electrical characterizations of 4H-SiC–oxide interfaces by spectroscopic ellipsometry and capacitance–voltage measurements

Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Journal:

Applied Surface Science

Year:

2009

Language:

english

File:

PDF, 625 KB

english, 2009

9

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

Hiroyuki Yaguchi, Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata, Sadafumi Yoshida

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 180 KB

english, 2005

10

RF-MBE growth of InN on 4H-SiC (0001) with off-angles

Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, Hiroyuki Yaguchi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 532 KB

english, 2010

11

RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)

Misao Orihara, Shuhei Yagi, Yasuto Hijikata, Hiroyuki Yaguchi

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 667 KB

english, 2012

12

Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

Oishi, Shingo, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 148 KB

english, 2006

13

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Kouda, Keiko, Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 786 KB

english, 2012

14

Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells

Noguchi, Shunsuke, Yagi, Shuhei, Sato, Daisuke, Hijikata, Yasuto, Onabe, Kentaro, Kuboya, Shigeyuki, Yaguchi, Hiroyuki

Journal:

IEEE Journal of Photovoltaics

Year:

2013

Language:

english

File:

PDF, 490 KB

english, 2013

15

Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates

Jin, Ri Guo, Yagi, Shuhei, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Katayama, Ryuji, Yaguchi, Hiroyuki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 536 KB

english, 2013

16

RF-MBE growth of cubic InN nano-scale dots on cubic GaN

Suzuki, Junichiro, Orihara, Misao, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 6.37 MB

english, 2013

17

[IEEE 2011 37th IEEE Photovoltaic Specialists Conference (PVSC) - Seattle, WA, USA (2011.06.19-2011.06.24)] 2011 37th IEEE Photovoltaic Specialists Conference - Quantum well double barrier resonant tunneling structures for selective contacts of hot carrier solar cells

Yagi, Shuhei, Hijikata, Yasuto, Okada, Yoshitaka, Yaguchi, Hiroyuki

Year:

2011

Language:

english

File:

PDF, 1.22 MB

english, 2011

18

Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

Narita, Katsutoshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Nakashima, Shinichi

Journal:

Japanese Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 177 KB

english, 2004

19

[IEEE 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) - Austin, TX, USA (2012.06.3-2012.06.8)] 2012 38th IEEE Photovoltaic Specialists Conference - Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells

Noguchi, Shunsuke, Yagi, Shuhei, Hijikata, Yasuto, Onabe, Kentaro, Kuboya, Shigeyuki, Yaguchi, Hiroyuki

Year:

2012

Language:

english

File:

PDF, 722 KB

english, 2012

20

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime

Hijikata, Yasuto, Yamamoto, Takeshi, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

21

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys

Okubo, Wataru, Yagi, Shuhei, Hijikata, Yasuto, Onabe, Kentaro, Yaguchi, Hiroyuki

Journal:

physica status solidi (a)

Year:

2014

Language:

english

File:

PDF, 354 KB

english, 2014

22

[IEEE 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Tampa, FL, USA (2013.06.16-2013.06.21)] 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) - Optical absorption by E+ miniband of GaAs:N δ-doped superlattices

Yagi, Shuhei, Noguchi, Shunsuke, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Okada, Yoshitaka, Yaguchi, Hiroyuki

Year:

2013

Language:

english

File:

PDF, 610 KB

english, 2013

23

Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy

Yagi, Shuhei, Suzuki, Junichiro, Orihara, Misao, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 498 KB

english, 2013

24

Enhanced optical absorption due to E + -related band transition in GaAs:N δ-doped superlattices

Yagi, Shuhei, Noguchi, Shunsuke, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Okada, Yoshitaka, Yaguchi, Hiroyuki

Journal:

Applied Physics Express

Year:

2014

Language:

english

File:

PDF, 890 KB

english, 2014

25

Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N δ-Doped Superlattices

Yagi, Shuhei, Noguchi, Shunsuke, Hijikata, Yasuto, Kuboya, Shigeyuki, Onabe, Kentaro, Yaguchi, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 518 KB

english, 2013

26

Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

Yaguchi, Hiroyuki, Narita, K., Hijikata, Yasuto, Yoshida, Sadafumi, Nakashima, Shinichi, Oyanagi, Naoki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 297 KB

2002

27

Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Takata, Y., Kobayashi, K., Shin, S., Nohira, H., Hattori, Takeshi

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

28

Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Poggi, Antonella, Moscatelli, Francesco, Hijikata, Yasuto, Solmi, Sandro, Sanmartin, Michele, Tamarri, Fabrizio, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 368 KB

english, 2007

29

Ultra-Precision Finishing of Micro Aspherical Surface by Ultrasonic Vibration Assisted Polishing

Suzuki, H., Kawamori, R., Miyabara, M., Okino, T., Hijikata, Yasuto, Yamamoto, Y., Nakamoto, K., Moriwaki, T., Shibutani, H.

Journal:

Key Engineering Materials

Year:

2005

Language:

english

File:

PDF, 583 KB

english, 2005

30

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In Situ Spectroscopic Ellipsometry

Takaku, Toshiyuki, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 281 KB

english, 2009

31

Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

Hijikata, Yasuto, Yaguchi, Hiroyuki, Ishida, Yuuki, Yoshikawa, Masahito, Kamiya, Toshio, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 216 KB

english, 2004

32

Theoretical Studies for Si and C Emission into SiC Layer during Oxidation

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 559 KB

english, 2011

33

Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy

Oishi, Shingo, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 871 KB

english, 2007

34

Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Hijikata, Yasuto, Yoshida, Sadafumi, Moscatelli, Francesco, Poggi, Antonella, Solmi, Sandro, Cristiani, Stefano, Nipoti, Roberta

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 225 KB

english, 2007

35

Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Takata, Y., Kobayashi, K., Nohira, H., Hattori, T.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 451 KB

english, 2006

36

Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

Jin, Ri Guo, Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 661 KB

english, 2015

37

The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements

Ishida, Yuuki, Takahashi, Tetsuo, Okumura, Hajime, Jikimoto, Tamotsu, Tsuchida, Hidekazu, Yoshikawa, Masahito, Tomioka, Yuichi, Midorikawa, M., Hijikata, Yasuto, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 355 KB

2002

38

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.57 MB

english, 2009

39

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide

Hijikata, Yasuto, Akasaka, Yurie, Yagi, Shuhei, Yaguchi, Hiroyuki

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 1.20 MB

english, 2014

40

Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy

Narita, K., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi, Senzaki, Junji, Nakashima, Shinichi

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 327 KB

english, 2004

41

Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer

Kakubari, K., Kuboki, R., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 381 KB

english, 2006

42

Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

Hijikata, Yasuto, Yagi, Shuhei, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 381 KB

english, 2013

43

Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic Ellipsometry

Tomioka, Yuichi, Iida, T., Midorikawa, M., Tukada, H., Yoshimoto, K., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Ishida, Yuuki, Kosugi, Ryouji, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 349 KB

2002

44

Characterization of 4H-SiC–SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer

Seki, H., Wakabayashi, T., Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 294 KB

english, 2009

45

X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC Interfaces

Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshikawa, Masahito, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 309 KB

2002

46

Physics and Technology of Silicon Carbide Devices || Fundamental Aspects of Silicon Carbide Oxidation

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 1.02 MB

english, 2012

47

Physics and Technology of Silicon Carbide Devices || Materials and Processing for Gate Dielectrics on Silicon Carbide (SiC) Surface

Hijikata, Yasuto

Year:

2012

Language:

english

File:

PDF, 1.33 MB

english, 2012

48

Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide

Takamiya, Kengo, Endo, Yuta, Fukushima, Toshiyuki, Yagi, Shuhei, Hijikata, Yasuto, Mochizuki, Toshimitsu, Yoshita, Masahiro, Akiyama, Hidefumi, Kuboya, Shigeyuki, Onabe, Kentaro, Katayama, Ryuji, Yagu

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 500 KB

english, 2012

49

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

Kouda, Keiko, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, Sadafumi

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 312 KB

english, 2010

50

AIP Conference Proceedings [AIP THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 - Zurich, Switzerland (29 July–3 August 2012)] - Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs

Takamiya, Kengo, Fukushima, Toshiyuki, Yagi, Shuhei, Hijikata, Yasuto, Mochizuki, Toshimitsu, Yoshita, Masahiro, Akiyama, Hidefumi, Kuboya, Shigeyuki, Onabe, Kentaro, Katayama, Ryuji, Yaguchi, Hiroyuk

Year:

2013

Language:

english

File:

PDF, 327 KB

english, 2013