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1

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Rossetto, Isabella, Meneghini, Matteo, Hilt, Oliver, Bahat-Treidel, Eldad, De Santi, Carlo, Dalcanale, Stefano, Wuerfl, Joachim, Zanoni, Enrico, Meneghesso, Gaudenzio

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.73 MB

english, 2016

2

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

Hilt, O., Brunner, F., Cho, E., Knauer, A., Bahat-Treidel, E., Wurfl, J.

Year:

2011

Language:

english

File:

PDF, 504 KB

english, 2011

3

[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - GaN-HEMTs devices with single- and double-heterostructure for power switching applications

Meneghesso, G., Zanandrea, A., Stocco, A., Rossetto, I., De Santi, C., Rampazzo, F., Meneghini, M., Zanoni, E., Bahat-Treidel, E., Hilt, O., Ivo, P., Wuerfl, J.

Year:

2013

Language:

english

File:

PDF, 1.04 MB

english, 2013

4

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs

Hilt, Oliver, Bahat-Treidel, Eldad, Cho, Eunjung, Singwald, Sebastian, Wurfl, Joachim

Year:

2012

Language:

english

File:

PDF, 1.09 MB

english, 2012

5

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

P. Ivo, A. Glowacki, E. Bahat-Treidel, R. Lossy, J. Würfl, C. Boit, G. Tränkle

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.45 MB

english, 2011

6

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

A. Glowacki, P. Laskowski, C. Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 766 KB

english, 2009

7

Reliability issues of GaN based high voltage power devices

J. Wuerfl, E. Bahat-Treidel, F. Brunner, E. Cho, O. Hilt, P. Ivo, A. Knauer, P. Kurpas, R. Lossy, M. Schulz, S. Singwald, M. Weyers, R. Zhytnytska

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.10 MB

english, 2011

8

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Bahat-Treidel, E., Hilt, O., Zhytnytska, R., Wentzel, A., Meliani, C., Wurfl, J., Trankle, G.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 757 KB

english, 2012

9

Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement

Bahat-Treidel, E., Hilt, O., Brunner, F., Wurfl, J., Trankle, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 688 KB

english, 2008

10

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

A. Zanandrea, E. Bahat-Treidel, F. Rampazzo, A. Stocco, M. Meneghini, E. Zanoni, O. Hilt, P. Ivo, J. Wuerfl, G. Meneghesso

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 1.19 MB

english, 2012

11

Breakdown and dynamic effects in GaN power switching devices

Würfl, Joachim, Hilt, Oliver, Bahat-Treidel, Eldad, Zhytnytska, Rimma, Kotara, Przemyslaw, Krüger, Olaf, Brunner, Frank, Weyers, Markus

Journal:

Physica status solidi

Year:

2013

Language:

english

File:

PDF, 473 KB

english, 2013

12

Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors

Chevtchenko, S.A., Schulz, M., Bahat-Treidel, E., John, W., Freyer, S., Kurpas, P., Würfl, J.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 932 KB

english, 2014

13

[IEEE 2013 IEEE 2nd International Workshop "Nonlinear Photonics" (NLP) - Sudak, Ukraine (2013.09.10-2013.09.11)] 2013 IEEE 2nd International Workshop "Nonlinear Photonics" (NLP*2013) - Anderson localization and nonlinearity in flat bands

Leykam, Daniel, Flach, Sergej, Bahat-Treidel, Omri, Desyatnikov, Anton S.

Year:

2013

Language:

english

File:

PDF, 1.64 MB

english, 2013

14

Discussion on “An electric harmonic analyser” before the Scottish Centre, at Glasgow, 9 December, 1924

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Journal:

Journal of the Institution of Electrical Engineers

Year:

1925

Language:

english

File:

PDF, 463 KB

english, 1925

15

Continuously controllable, wide-angle liquid crystal beam deflector based on the transversal field effect in a three-electrode cell

Bahat-Treidel, Eldad

Journal:

Optical Engineering

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005

16

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Meneghini, M., Bisi, D., Rossetto, I., De Santi, C., Stocco, A., Hilt, O., Bahat-Treidel, E., Wuerfl, J., Rampazzo, F., Meneghesso, G., Zanoni, E.

Year:

2015

Language:

english

File:

PDF, 506 KB

english, 2015

17

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - Impact of the buffer structure on trapping characteristics of normally-off p-GaN/AlGaN/GaN HEMTs for power switching applications

Tapajna, M., Valik, L., Kotara, P., Zhytnytska, R., Brunner, F., Hilt, O., Bahat-Treidel, E., Wurfl, J., Kuzmik, J.

Year:

2014

Language:

english

File:

PDF, 444 KB

english, 2014

18

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Hilt, Oliver, Zhytnytska, Rimma, Bocker, Jan, Bahat-Treidel, Eldad, Brunner, Frank, Knauer, Arne, Dieckerhoff, Sibylle, Wurfl, Joachim

Year:

2015

Language:

english

File:

PDF, 653 KB

english, 2015

19

Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Eldad Bahat-Treidel, Ibrahim Khalil, Oliver Hilt, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 338 KB

english, 2009

20

Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement

Eldad Bahat-Treidel, Oliver Hilt, Fank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

21

AlGaN/GaN/AlGaN double heterojunction HEMTs on n-type SiC substrates

Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl, Günther Tränkle

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 146 KB

english, 2010

22

Comparative study of buffer designs for high breakdown voltage AlGaNGaN HFETs

Frank Brunner, Eldad Bahat-Treidel, Melanie Cho, Carsten Netzel, Oliver Hilt, Joachim Würfl, Markus Weyers

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 222 KB

english, 2011

23

Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

Khalil, I., Bahat-Treidel, E., Schnieder, F., Wurfl, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 596 KB

english, 2009

24

AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)

Bahat-Treidel, E., Hilt, O., Brunner, F., Sidorov, V., Würfl, J., Tränkle, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.58 MB

english, 2010

25

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low

Bahat-Treidel, E., Brunner, F., Hilt, O., Cho, E., Wurfl, J., Trankle, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.73 MB

english, 2010

26

On the Fringing-Field Effect in Liquid-Crystal Beam-Steering Devices

Apter, Boris, Efron, Uzi, Bahat-Treidel, Eldad

Journal:

Year:

2004

Language:

english

File:

PDF, 327 KB

english, 2004

27

Experimental study of phase-step broadening by fringing fields in a three-electrode liquid-crystal cell

Bahat-Treidel, Eldad, Apter, Boris, Efron, Uzi

Journal:

Year:

2005

Language:

english

File:

PDF, 221 KB

english, 2005

28

Fringing-field effect in liquid-crystal beam-steering devices: an approximate analytical model

Efron, Uzi, Apter, Boris, Bahat-Treidel, Eldad

Journal:

Journal of the Optical Society of America A

Year:

2004

Language:

english

File:

PDF, 383 KB

english, 2004

29

Symmetry breaking in honeycomb photonic lattices

Bahat-Treidel, Omri, Peleg, Or, Segev, Mordechai

Journal:

Year:

2008

Language:

english

File:

PDF, 218 KB

english, 2008

30

Observation of asymptotic localization of a wave packet

Dreisow, Felix, Bahat-Treidel, Omri, Welt, Dafna, Szameit, Alexander

Journal:

Year:

2011

Language:

english

File:

PDF, 484 KB

english, 2011

31

Breakdown of Dirac dynamics in honeycomb lattices due to nonlinear interactions

Bahat-Treidel, Omri, Peleg, Or, Segev, Mordechai, Buljan, Hrvoje

Journal:

Physical Review A

Year:

2010

Language:

english

File:

PDF, 504 KB

english, 2010

32

Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Lu, C Y, Bahat-Treidel, E, Hilt, O, Lossy, R, Chaturvedi, N, Chang, E Y, Würfl, J, Tränkle, G

Journal:

Semiconductor Science and Technology

Year:

2010

Language:

english

File:

PDF, 408 KB

english, 2010

33

Nonlinear wave dynamics in honeycomb lattices

Bahat-Treidel, Omri, Segev, Mordechai

Journal:

Physical Review A

Year:

2011

Language:

english

File:

PDF, 298 KB

english, 2011

34

Pseudospin and nonlinear conical diffraction in Lieb lattices

Leykam, Daniel, Bahat-Treidel, Omri, Desyatnikov, Anton S.

Journal:

Physical Review A

Year:

2012

Language:

english

File:

PDF, 634 KB

english, 2012

35

Lossy, R., Wurfl, J., Trankle, G., Bahat-Treidel, E.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 426 KB

english, 2009

36

(Invited) Technological Approaches Towards High Voltage, Fast Switching GaN Power Transistors

Wurfl, J., Hilt, O., Bahat-Treidel, E., Zhytnytska, R., Klein, K., Kotara, P., Brunner, F., Knauer, A., Kruger, O., Weyers, M., Trankle, G.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 366 KB

english, 2013

37

Normally-off GaN Transistors for Power Applications

Hilt, O, Bahat-Treidel, E, Brunner, F, Knauer, A, Zhytnytska, R, Kotara, P, Wuerfl, J

Journal:

Journal of Physics Conference Series

Year:

2014

Language:

english

File:

PDF, 533 KB

english, 2014

38

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Techniques towards GaN power transistors with improved high voltage dynamic switching properties

Wurfl, J., Hilt, O., Bahat-Treidel, E., Zhytnytska, R., Kotara, P., Brunner, F., Krueger, O., Weyers, M.

Year:

2013

Language:

english

File:

PDF, 742 KB

english, 2013

39

-symmetry in honeycomb photonic lattices

Szameit, Alexander, Rechtsman, Mikael C., Bahat-Treidel, Omri, Segev, Mordechai

Journal:

Physical Review A

Year:

2011

Language:

english

File:

PDF, 569 KB

english, 2011

40

Flat band states: Disorder and nonlinearity

Leykam, Daniel, Flach, Sergej, Bahat-Treidel, Omri, Desyatnikov, Anton S.

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 849 KB

english, 2013

41

Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer

Chevtchenko, S. A., Cho, E., Brunner, F., Bahat-Treidel, E., Würfl, J.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 361 KB

english, 2012

42

[IEEE 2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel - Tel-Aviv, Israel (6-7 Sept. 2004)] 2004 23rd IEEE Convention of Electrical and Electronics Engineers in Israel - Electrooptical wide-angle beam deflector based on fringing-field-induced refractive inhomogeneity in a liquid crystal layer

Apter, B., Bahat-Treidel, E., Efron, U.

Year:

2004

Language:

english

File:

PDF, 370 KB

english, 2004

43

[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Ivo, Ponky, Glowacki, Arkadiusz, Pazirandeh, Reza, Bahat-Treidel, Eldad, Lossy, Richard, Wurfl, Joachim, Boit, Christian, Trankle, Gunther

Year:

2009

Language:

english

File:

PDF, 764 KB

english, 2009

44

Klein Tunneling in Deformed Honeycomb Lattices

Bahat-Treidel, Omri, Peleg, Or, Grobman, Mark, Shapira, Nadav, Segev, Mordechai, Pereg-Barnea, T.

Journal:

Physical Review Letters

Year:

2010

Language:

english

File:

PDF, 444 KB

english, 2010

45

[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - Evaluation of 600V GaN and SiC Schottky diodes at different temperatures

Badawi, Nasser, Bahat-Treidel, Eldad, Dieckerhoff, Sibylle, Hilt, Oliver, Wurfl, Joachim

Year:

2013

Language:

english

File:

PDF, 446 KB

english, 2013

46

[IEEE 12th European Quantum Electronics Conference CLEO EUROPE/EQEC - Munich, Germany (2011.05.22-2011.05.26)] 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC) - Photonic graphene: Broken PT-symmetry, strain, and optical tachyons

Szameit, Alexander, Rechtsman, Mikael C., Bahat-Treidel, Omri, Segev, Mordechai

Year:

2011

Language:

english

File:

PDF, 617 KB

english, 2011

47

[IEEE 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC - Munich, Germany (2013.05.12-2013.05.16)] 2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC - Conical diffraction, pseudospin, and nonlinear wave dynamics in photonic Lieb lattices

Leykam, Daniel, Bahat-Treidel, Omri, Desyatnikov, Anton S.

Year:

2013

Language:

english

File:

PDF, 160 KB

english, 2013

48

Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

Wurfl, J., Bahat-Treidel, E., Brunner, F., Cho, M., Hilt, O., Knauer, A., Kotara, P., Krueger, O., Weyers, M., Zhytnytska, R.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 752 KB

english, 2013

49

Normally-Off GaN Transistors for Power Switching Applications

Hilt, O., Bahat-Treidel, E., Brunner, F., Knauer, A., Zhytnytska, R., Kotara, P., Wuerfl, J.

Journal:

ECS Transactions

Year:

2013

Language:

english

File:

PDF, 424 KB

english, 2013

50

Vertical Blocking Voltage Improvement of GaN HEMT Structures on n-SiC by Pre-Epitaxial Substrate Implantation

Kotara, P., Zhytnytska, R., Hilt, O., Cho, E., Brunner, F., Thies, A., Bahat-Treidel, E., Wurfl, J.

Journal:

ECS Journal of Solid State Science and Technology

Year:

2013

Language:

english

File:

PDF, 2.12 MB

english, 2013

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