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1

Comparison of contact resistance between accumulation-mode and inversion-mode multigate FETs

Chi-Woo Lee, Dimitri Lederer, Aryan Afzalian, Ran Yan, Nima Dehdashti, Weize Xiong, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 366 KB

english, 2008

2

Influence of gate misalignment on the electrical characteristics of MuGFETS

Chi-Woo Lee, Aryan Afzalian, Isabelle Ferain, Ran Yan, Nima Dehdashti Akhavan, Weize Xiong, Jean-Pierre Colinge

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 767 KB

english, 2010

3

[IEEE 2007 IEEE Symposium on VLSI Technology - Kyoto, Japan (2007.06.12-2007.06.14)] 2007 IEEE Symposium on VLSI Technology - BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design

Dunga, Mohan V., Lin, Chung-Hsun, Lu, Darsen D., Xiong, Weize, Cleavelin, C. R., Patruno, P., Hwang, Jiunn-Ren, Yang, Fu-Liang, Niknejad, Ali M., Hu, Chenming

Year:

2007

Language:

english

File:

PDF, 884 KB

english, 2007

4

ESD Evaluation of the Emerging MuGFET Technology

Russ, C., Gossner, H., Schulz, T., Chaudhary, N., Weize Xiong,, Marshall, A., Duvvury, C., Schrufer, K., Rinn Cleavelin, C.R.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2007

Language:

english

File:

PDF, 1.49 MB

english, 2007

5

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Unique ESD Failure Mechanism in a MuGFET Technology

Gossner, Harald, Russ, Christian, Siegelin, Frank, Schneider, Jens, Schruefer, Klaus, Schulz, Thomas, Duvvury, Charvaka, Cleavelin, C. Rinn, Xiong, Weize

Year:

2006

Language:

english

File:

PDF, 2.80 MB

english, 2006

6

[IEEE 2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software - Univ. of Texas at Dallas, Richardson, TX, USA (2006.10.29-2006.10.30)] 2006 IEEE Dallas/CAS Workshop on Design, Applications, Integration and Software - Ring Oscillator Performance and Parasitic Extraction Simulation in Finfet Technology

Kulkarni, Mak, Marshall, Andrew, Cleavelin, C., Xiong, Weize, Pacha, Christian, Armin, Klaus, Schulz, Thomas, Schruefer, Klaus, Patruno, Paul

Year:

2006

Language:

english

File:

PDF, 225 KB

english, 2006

7

Comparison of different surface orientation in narrow fin MuGFETs

Chi-Woo Lee, Aryan Afzalian, Isabelle Ferain, Ran Yan, Nima Dehdashti, Ki-Yeol Byun, Cynthia Colinge, Weize Xiong, Jean-Pierre Colinge

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 614 KB

english, 2009

8

Quantum-mechanical effects in trigate SOI MOSFETs

Colinge, J.-P., Alderman, J.C., Weize Xiong, Cleavelin, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 296 KB

english, 2006

9

Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters

Lee, C.-W., Afzalian, A., Yan, R., Akhavan, N.D., Weize Xiong, Colinge, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 668 KB

english, 2008

10

Gate-Length-Dependent Strain Effect in n- and p-Channel FinFETs

Jooyoung Song, Bo Yu, Weize Xiong, Yuan Taur

Journal:

IEEE Transactions on Electron Devices

Year:

2009

Language:

english

File:

PDF, 239 KB

english, 2009

11

Compact Modeling of Experimental n- and p-Channel FinFETs

Jooyoung Song, Yu Yuan, Bo Yu, Weize Xiong, Yuan Taur

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 340 KB

english, 2010

12

[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - Global parameter extraction for a multi-gate MOSFETs compact model

Yao, Shijing, Morshed, Tanvir H., Lu, Darsen D., Venugopalan, Sriramkumar, Xiong, Weize, Cleavelin, C. R., Niknejad, Ali M., Hu, Chenming

Year:

2010

Language:

english

File:

PDF, 1.27 MB

english, 2010

13

Low-temperature electron mobility in Trigate SOI MOSFETs

Colinge, J.-P., Quinn, A.J., Floyd, L., Redmond, G., Alderman, J.C., Weize Xiong, Cleavelin, C.R., Schulz, T., Schruefer, K., Knoblinger, G., Patruno, P.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006

14

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Design of FinFET SRAM Cells Using a Statistical Compact Model

Lu, Darsen D., Lin, Chung-Hsun, Yao, Shijing, Xiong, Weize, Bauer, Florian, Cleavelin, Cloves R., Niknejad, Ali M., Hu, Chenming

Year:

2009

Language:

english

File:

PDF, 505 KB

english, 2009

15

[IEEE 2006 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - San Francisco, CA (2006.02.6-2006.02.9)] 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers - Circuit design issues in multi-gate FET CMOS technologies

Pacha, C., von Arnim, K., Schulz, T., Weize Xiong,, Gostkowski, M., Knoblinger, G., Marshall, A., Nirschl, T., Berthold, J., Russ, C., Gossner, H., Duvvury, C., Patruno, P., Cleavelin, R., Schruefer,

Year:

2006

Language:

english

File:

PDF, 921 KB

english, 2006

16

Impact of Gate-Induced Strain on MuGFET Reliability

Nathanael, Rhesa, Xiong, Weize, Cleavelin, C. Rinn, Liu, Tsu-Jae King

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 592 KB

english, 2008

17

[IEEE 2006 IEEE International Conference on IC Design and Technology - Padova, Italy ()] 2006 IEEE International Conference on IC Design and Technology - Characterization of HfSiON Gate Dielectric with TiN Gate on Multi-Gate MOSFET

Weize Xiong,, Chadwin Young,, Matthew, K., Cleavelin, C.R., Schulz, T., Schruefer, K., Patruno, P.

Year:

2006

Language:

english

File:

PDF, 2.83 MB

english, 2006

18

[IEEE 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Hsinchu, Taiwan (2007.04.23-2007.04.25)] 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Multi-Gate MOSFETs with Dual Contact Etch Stop Liner Stressors on Tensile Metal Gate and Strained Silicon on Insulator (sSOI)

Hsu, Che-Hua, Xiong, Weize, Lin, Chien-Ting, Huang, Yao-Tsung, Ma, Mike, Cleavelin, C.R, Patruno, Paul, Kennard, Mark, Cayrefourcq, Ian, Shin, Kyoungsub, Liu, Tsu-Jae King

Year:

2007

Language:

english

File:

PDF, 910 KB

english, 2007

19

[IEEE 2007 IEEE International SOI Conference - Indian Wells, CA, USA (2007.10.1-2007.10.4)] 2007 IEEE International SOI Conference - Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer

Patruno, Paul, Kostrzewa, Marek, Landry, Karine, Xiong, Weize, Cleavelin, C. Rinn, Hsu, Che-Hua, Ma, Mike, Colinge, Jean-Pierre

Year:

2007

Language:

english

File:

PDF, 1.13 MB

english, 2007

20

Trigate FET Device Characteristics Improvement Using a Hydrogen Anneal Process With a Novel Hard Mask Approach

Zaman, Rownak J., Mathews, Kenneth, Xiong, Weize, Banerjee, Sanjay K.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 420 KB

english, 2007

21

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Mamouni, Farah E., Dixit, Sriram K., Schrimpf, Ronald D., Adell, Philippe C., Esqueda, Ivan S., McLain, Michael L., Barnaby, Hugh J., Cristoloveanu, Sorin, Xiong, Weize

Journal:

IEEE Transactions on Nuclear Science

Year:

2008

Language:

english

File:

PDF, 367 KB

english, 2008

22

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Accurate modeling of SOI Multi-Gate FETs and their transient response to radiation

Turowski, Marek, Raman, Ashok, Xiong, Weize

Year:

2012

Language:

english

File:

PDF, 824 KB

english, 2012

23

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate

Xiong, Weize, Shin, Kyoungsub, Cleavelin, C., Schulz, Thomas, Schruefer, Klaus, Cayrefourcq, I., Kennard, M., Mazure, C., Patruno, Paul, Liu, Tsu-jae

Year:

2006

Language:

english

File:

PDF, 2.38 MB

english, 2006

24

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

El Mamouni, Farah, Zhang, En Xia, Schrimpf, Ronald D., Fleetwood, Daniel M., Reed, Robert A., Cristoloveanu, Sorin, Xiong, Weize

Journal:

IEEE Transactions on Nuclear Science

Year:

2009

Language:

english

File:

PDF, 838 KB

english, 2009

25

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - MuGFET carrier mobility and velocity: Impacts of fin aspect ratio, orientation and stress

Nuo Xu,, Xin Sun,, Weize Xiong,, Rinn Cleavelin, C., Tsu-Jae King Liu,

Year:

2010

Language:

english

File:

PDF, 509 KB

english, 2010

26

Radiation Dose Effects in Trigate SOI MOS Transistors

Colinge, J. P., Orozco, A., Rudee, J., Xiong, Weize, Cleavelin, C. Rinn, Schulz, T., Schrfer, K., Knoblinger, G., Patruno, P.

Journal:

IEEE Transactions on Nuclear Science

Year:

2006

Language:

english

File:

PDF, 1.27 MB

english, 2006

27

[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - Influence of gate misalignment on the electrical characteristics of MuGFETs

Lee, Chi-Woo, Afzalian, Aryan, Yan, Ran, Dehdashti, Nima, Xiong, Weize, Colinge, Jean-Pierre

Year:

2009

Language:

english

File:

PDF, 262 KB

english, 2009

28

[IEEE 2006 IEEE international SOI - Niagara Falls, NY, USA (2006.10.2-2006.10.5)] 2006 IEEE international SOI Conferencee Proceedings - Effects of Temperature on Metal Gate FinFET Circuit Performance

Marshall, Andrew, Xiong, Weize, Cleavelin, C., Matthews, Ken, Konblinger, Gerhard, Pacha, Christian, Armin, Klaus, Schulz, Thomas, Schruefer, Klaus, Patruno, Paul

Year:

2006

Language:

english

File:

PDF, 2.17 MB

english, 2006

29

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Influence of gate underlap in AM and IM MuGFETs

Chi-Woo Lee,, Afzalian, Aryan, Yan, Ran, Dehdashti, Nima, Weize Xiong,, Colinge, Jean-Pierre

Year:

2008

Language:

english

File:

PDF, 332 KB

english, 2008

30

[IEEE 2007 IEEE Dallas Engineering in Medicine and Biology Workshop - Dallas, TX (2007.11.11-2007.11.12)] 2007 IEEE Dallas Engineering in Medicine and Biology Workshop - Silicon on Insulator - The Perfect Material for Implantable Electronics?

Marshall, Andrew, Cleavelin, C. Rinn, Xiong, Weize, Pacha, Christian, Russ, Christian, von Arnim, Klaus, Schulz, Thomas, Schruefer, Klaus, Knoblinger, Gerhard, Patruno, Paul

Year:

2007

Language:

english

File:

PDF, 4.52 MB

english, 2007

31

[IEEE 2007 IEEE International SOC Conference (SOCC) - Hsin Chu, Taiwan (2007.09.26-2007.09.29)] 2007 IEEE International SOC Conference - A merged MuGFET and planar SOI process

Marshall, Andrew, Cleavelin, C. Rinn, Weize Xiong,, Pacha, Christian, Knoblinger, Gerhard, Von Armin, Klaus, Schulz, Thomas, Schruefer, Klaus, Matthews, Ken, Molzer, Wolfgang, Patruno, Paul, Russ, Ch

Year:

2007

Language:

english

File:

PDF, 206 KB

english, 2007

32

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs

Zhang, En Xia, Fleetwood, Daniel M., El-Mamouni, Farah, Alles, Michael L., Schrimpf, Ronald D., Xiong, Weize, Hobbs, Chris, Akarvardar, Kerem, Cristoloveanu, Sorin

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 741 KB

english, 2010

33

Fin Sidewall Microroughness Measurement by AFM

Gondran, Carolyn F. H., Morales, Emily, Guerry, Angela, Xiong, Weize, Cleavelin, C. Rinn, Wise, Rick, Balasubramanian, Sriram, King, Tsu-Jae

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 210 KB

english, 2004

34

Self-aligned implanted ground-plane fully depleted SOI MOSFET

Xiong, Weize, Colinge, J.P.

Journal:

Electronics Letters

Year:

1999

Language:

english

File:

PDF, 692 KB

english, 1999

35

Properties of Accumulation-Mode Multi-Gate Field-Effect Transistors

Colinge, Jean-Pierre, Lederer, Dimitri, Afzalian, Aryan, Yan, Ran, Lee, Chi-Woo, Akhavan, Nima Dehdashti, Xiong, Weize

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 250 KB

english, 2009

36

[IEEE 2014 International Conference of Educational Innovation through Technology (EITT) - Brisbane, Australia (2014.10.27-2014.10.29)] 2014 International Conference of Educational Innovation through Technology - The Analysis of Copyright Protection of Digital Teaching Resources Sharing in Higher Education on the View of Game Theory

Xiong, Qiue, Ding, Weize

Year:

2014

File:

PDF, 130 KB

2014

37

[IEEE 2014 International Conference of Educational Innovation through Technology (EITT) - Brisbane, Australia (2014.10.27-2014.10.29)] 2014 International Conference of Educational Innovation through Technology - The Analysis of Copyright Protection of Digital Teaching Resources Sharing in Higher Education on the View of Game Theory

Xiong, Qiue, Ding, Weize

Year:

2014

Language:

english

File:

PDF, 130 KB

english, 2014

38

[IEEE 2006 IEEE International Conference on IC Design and Technology - Padova, Italy (24-26 May 2006)] 2006 IEEE International Conference on IC Design and Technology - Characterization of HfSiON Gate Dielectric with TiN Gate on Multi-Gate MOSFET

Weize Xiong,, Chadwin Young,, Matthew, K., Cleavelin, C.R., Schulz, T., Schruefer, K., Patruno, P.

Year:

2006

Language:

english

File:

PDF, 2.83 MB

english, 2006

39

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications

Xiong, Weize W., Cleavelin, C. Rinn, Hsu, Che-Hua, Ma, Mike, Schruefer, Klaus, Von Arnim, Klaus, Schulz, Thomas, Cayrefourcq, Ian, Mazure, Carlos, Patruno, Paul, Kennard, Mark, Shin, Kyoungsub, Xin, S

Year:

2007

Language:

english

File:

PDF, 1.64 MB

english, 2007

40

A nuclear permeable Ru(II)–based photoactivated chemotherapeutic agent towards a series of cancer cells: in vitro and in vivo studies

Tian, Na, Feng, Yang, Sun, Weize, Lu, Jian, Lu, Songsong, Yao, Yishan, Li, Chao, Wang, Xuesong, Zhou, Qian-Xiong

Journal:

Dalton Transactions

Year:

2019

File:

PDF, 1022 KB

2019

41

A nuclear permeable Ru(II)–based photoactivated chemotherapeutic agent towards a series of cancer cells: in vitro and in vivo studies

Tian, Na, Feng, Yang, Sun, Weize, Lu, Jian, Lu, Songsong, Yao, Yishan, Li, Chao, Wang, Xuesong, Zhou, Qian-Xiong

Journal:

Dalton Transactions

Year:

2019

Language:

english

File:

PDF, 1022 KB

english, 2019

42

Fluorination on non-photolabile dppz ligand improving Ru(II) complex-based photoactivated chemotherapy

Boerhan, Rena, Sun, Weize, Tian, Na, Wang, Youchao, Lu, Jian, Li, Chao, Cheng, Xue-Xin, Wang, Xuesong, Zhou, Qian-Xiong

Journal:

Dalton Transactions

Year:

2019

Language:

english

File:

PDF, 3.62 MB

english, 2019